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(2002, September) Journal of Applied Physics Vol. 92 (6) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year2002 (September)Volume92
Issue<   6   >
PublisherAIP Publishing
Mindat Ref. ID5116594Long-form Identifiermindat:1:5:5116594:1
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Full Reference(2002, September) Journal of Applied Physics Vol. 92 (6) AIP Publishing
Plain Text(2002, September) Journal of Applied Physics Vol. 92 (6) AIP Publishing
In(2002) Journal of Applied Physics Vol. 92. AIP Publishing

Contains

Chen, Feng, Wang, Ke-Ming, Wang, Xue-Lin, Li, Xi-Shan, Lu, Qing-Ming, Shen, Ding-Yu, Nie, Rui (2002) Monomode, nonleaky planar waveguides in a Nd3+-doped silicate glass produced by silicon ion implantation at low doses. Journal of Applied Physics, 92 (6). 2959-2961 doi:10.1063/1.1499204
Zhang, Li Hong, Gong, Hao, Wang, Jian Ping (2002) Kinetics and mechanisms of laser-induced decompositions of hydrogenated amorphous carbon films on magnetic hard disks. Journal of Applied Physics, 92 (6). 2962-2968 doi:10.1063/1.1500790
Chen, Yan-bin, Cai, Xiang-bao, Zhu, Yong-yuan, Zhu, Shi-ning, Ming, Nai-ben (2002) Second harmonic generation in two-dimensional metal photonic band gap materials. Journal of Applied Physics, 92 (6). 2969-2973 doi:10.1063/1.1481779
Giehler, M., Herfort, J., Ulrici, W., DĂ€weritz, L., Ploog, K. H. (2002) Optical properties of low-temperature grown GaAs on Bragg reflectors. Journal of Applied Physics, 92 (6). 2974-2976 doi:10.1063/1.1499747
Zhao, J., Green, M. A., Wang, A. (2002) High-efficiency optical emission, detection, and coupling using silicon diodes. Journal of Applied Physics, 92 (6). 2977-2979 doi:10.1063/1.1503168
Oates, T. W. H., Bilek, M. M. M. (2002) Insulator surface charging and dissipation during plasma immersion ion implantation using a thin conductive surface film. Journal of Applied Physics, 92 (6). 2980-2983 doi:10.1063/1.1503149
Barnat, E. V., Lu, T. -M. (2002) Measured energy distributions of ions driven by an asymmetrically pulsed bias during magnetron sputtering. Journal of Applied Physics, 92 (6). 2984-2989 doi:10.1063/1.1501739
Nakano, Toshiki, Kumagai, Shinya, Samukawa, Seiji (2002) Estimation of dissociation degree of N2 in an inductively coupled plasma by vacuum ultraviolet emission spectroscopy. Journal of Applied Physics, 92 (6). 2990-2995 doi:10.1063/1.1501741
Lee, E. Y. M., Tran, N., Russell, J., Lamb, R. N. (2002) Nanocrystalline order of zinc oxide thin films grown on optical fibers. Journal of Applied Physics, 92 (6). 2996-2999 doi:10.1063/1.1495064
Sammynaiken, R., Naftel, S. J., Sham, T. K., Cheah, K. W., Averboukh, B., Huber, R., Shen, Y. R., Qin, G. G., Ma, Z. C., Zong, W. H. (2002) Structure and electronic properties of SiO2/Si multilayer superlattices: SiKedge and L3,2 edge x-ray absorption fine structure study. Journal of Applied Physics, 92 (6). 3000-3006 doi:10.1063/1.1501742
Ge, J., Kivilahti, J. K. (2002) Effects of surface treatments on the adhesion of Cu and Cr/Cu metallizations to a multifunctional photoresist. Journal of Applied Physics, 92 (6). 3007-3015 doi:10.1063/1.1495528
Meeder, A., MarrĂłn, D. Fuertes, Rumberg, A., Lux-Steiner, M. Ch., Chu, V., Conde, J. P. (2002) Direct measurement of Urbach tail and gap state absorption in CuGaSe2 thin films by photothermal deflection spectroscopy and the constant photocurrent method. Journal of Applied Physics, 92 (6). 3016-3020 doi:10.1063/1.1501745
Pesty, F., Garoche, P., Dorel, S. (2002) Modulation of the beam intensity for high-dynamic-range low energy electron diffraction. Journal of Applied Physics, 92 (6). 3021-3026 doi:10.1063/1.1494111
Ellaway, S. W., Faux, D. A. (2002) Effective elastic stiffnesses of InAs under uniform strain. Journal of Applied Physics, 92 (6). 3027-3033 doi:10.1063/1.1500421
Anedda, A., Carbonaro, C. M., Clemente, F., Corpino, R. (2002) Ultraviolet excitation fine tuning of luminescence bands of oxygen-deficient centers in silica. Journal of Applied Physics, 92 (6). 3034-3038 doi:10.1063/1.1499984
Heutz, S., Jones, T. S. (2002) Structural and morphological modifications in double layer heterostructures containing H2Pc, perylene-3, 4, 9, 10-tetracarboxylic dianhydride and Alq3. Journal of Applied Physics, 92 (6). 3039-3046 doi:10.1063/1.1499743
Balderas-LĂłpez, J. A., Mandelis, A., Garcı́a, J. A. (2002) Normalized photoacoustic techniques for thermal diffusivity measurements of buried layers in multilayered systems. Journal of Applied Physics, 92 (6). 3047-3055 doi:10.1063/1.1500784
de Ridder, M., van Welzenis, R. G., van der Gon, A. W. Denier, Brongersma, H. H., Wulff, S., Chu, W.-F., Weppner, W. (2002) Subsurface segregation of yttria in yttria stabilized zirconia. Journal of Applied Physics, 92 (6). 3056-3064 doi:10.1063/1.1499748
FalcĂŁo-Filho, Edilson L., de AraĂșjo, Cid B., Messaddeq, Y. (2002) Frequency upconversion involving triads and quartets of ions in a Pr3+/Nd3+ codoped fluoroindate glass. Journal of Applied Physics, 92 (6). 3065-3070 doi:10.1063/1.1501757
Kuroda, Takamasa, Tackeuchi, Atsushi (2002) Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells. Journal of Applied Physics, 92 (6). 3071-3074 doi:10.1063/1.1502186
Peng, D. L., Hihara, T., Sumiyama, K., Morikawa, H. (2002) Structural and magnetic characteristics of monodispersed Fe and oxide-coated Fe cluster assemblies. Journal of Applied Physics, 92 (6). 3075-3083 doi:10.1063/1.1501754
Yang, B., Pan, E. (2002) Elastic analysis of an inhomogeneous quantum dot in multilayered semiconductors using a boundary element method. Journal of Applied Physics, 92 (6). 3084-3088 doi:10.1063/1.1502201
Fu, Y., Ferdos, F., Sadeghi, M., Wang, S. M., Larsson, A. (2002) Photoluminescence of an assembly of size-distributed self-assembled InAs quantum dots. Journal of Applied Physics, 92 (6). 3089-3092 doi:10.1063/1.1499528
Chambouleyron, I., Ventura, S. D., Birgin, E. G., MartĂ­nez, J. M. (2002) Optical constants and thickness determination of very thin amorphous semiconductor films. Journal of Applied Physics, 92 (6). 3093-3102 doi:10.1063/1.1500785
Vogelgesang, R., Grimsditch, M., Wallace, J. S. (2002) Polarized ultraviolet Raman spectroscopy of ÎČ-Si3N4. Journal of Applied Physics, 92 (6). 3103-3106 doi:10.1063/1.1503164
Millett, J. C. F., Bourne, N. K., Gray, G. T. (2002) Behavior of the shape memory alloy NiTi during one-dimensional shock loading. Journal of Applied Physics, 92 (6). 3107-3110 doi:10.1063/1.1498877
Xia, Feng, Razavi, B., Xu, Haisheng, Cheng, Z.-Y., Zhang, Q. M. (2002) Dependence of threshold thickness of crystallization and film morphology on film processing conditions in poly(vinylidene fluoride–trifluoroethylene) copolymer thin films. Journal of Applied Physics, 92 (6). 3111-3115 doi:10.1063/1.1503395
Ruitenberg, G., Petford-Long, A. K., Doole, R. C. (2002) Determination of the isothermal nucleation and growth parameters for the crystallization of thin Ge2Sb2Te5 films. Journal of Applied Physics, 92 (6). 3116-3123 doi:10.1063/1.1503166
Evans, Gareth J., Mizuta, H. (2002) Analysis of negative differential conductance in a two-island Coulomb blockade system by a polytope approximation in phase space. Journal of Applied Physics, 92 (6). 3124-3129 doi:10.1063/1.1500786
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Pashkova, N. Y., Kim, J., Ren, F., Overberg, M. E., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Wilson, R. G. (2002) Electrical and optical properties of GaN films implanted with Mn and Co. Journal of Applied Physics, 92 (6). 3130-3136 doi:10.1063/1.1499977
Jappsen, A.-K., Amann, A., Wacker, A., Schöll, E., Schomburg, E. (2002) High-frequency impedance of driven superlattices. Journal of Applied Physics, 92 (6). 3137-3140 doi:10.1063/1.1501756
SĂ©e, Johann, Dollfus, Philippe, Galdin, Sylvie (2002) Comparison of a density functional theory and a Hartree treatment of silicon quantum dot. Journal of Applied Physics, 92 (6). 3141-3146 doi:10.1063/1.1499524
Mammoliti, F., Grimaldi, M. G., La Via, F. (2002) Electrical resistivity and Hall coefficient of C49, C40, and C54 TiSi2 thin-film phases. Journal of Applied Physics, 92 (6). 3147-3151 doi:10.1063/1.1500787
Zeng, Taofang, Chen, Gang (2002) Interplay between thermoelectric and thermionic effects in heterostructures. Journal of Applied Physics, 92 (6). 3152-3161 doi:10.1063/1.1499527
Devine, R. A. B. (2002) Mobile charge, soft breakdown, and self-healing in hydrogen silsesquioxane based intermetal dielectric. Journal of Applied Physics, 92 (6). 3162-3168 doi:10.1063/1.1499234
Bonci, L., Gattobigio, M., Iannaccone, G., Macucci, M. (2002) Simulation of time evolution of clocked and nonclocked quantum cellular automaton circuits. Journal of Applied Physics, 92 (6). 3169-3178 doi:10.1063/1.1501747
Maffeis, T. G. G., Simmonds, M. C., Clark, S. A., Peiro, F., Haines, P., Parbrook, P. J. (2002) Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts. Journal of Applied Physics, 92 (6). 3179-3186 doi:10.1063/1.1501750
Altermatt, Pietro P., Schumacher, JĂŒrgen O., Cuevas, Andres, Kerr, Mark J., Glunz, Stefan W., King, Richard R., Heiser, Gernot, Schenk, Andreas (2002) Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters. Journal of Applied Physics, 92 (6). 3187-3197 doi:10.1063/1.1501743
Amman, Mark, Lee, Julie S., Luke, Paul N. (2002) Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe. Journal of Applied Physics, 92 (6). 3198-3206 doi:10.1063/1.1502922
Persson, C., Sernelius, Bo E., Ferreira da Silva, A., AraĂșjo, C. MoysĂ©s, Ahuja, R., Johansson, B. (2002) Optical and reduced band gap inn- andp-type GaN and AlN. Journal of Applied Physics, 92 (6). 3207-3216 doi:10.1063/1.1504499
Ito, Mikio, Nagai, Hiroshi, Tahata, Takashi, Katsuyama, Shigeru, Majima, Kazuhiko (2002) Effects of Zr substitution on phase transformation and thermoelectric properties of ÎČ-FeSi2. Journal of Applied Physics, 92 (6). 3217-3222 doi:10.1063/1.1502202
Twisselmann, D. J., Chambers, P. G., Ross, C. A., Khanna, G., Clemens, B. M. (2002) Origins of substrate-topography-induced magnetic anisotropy in sputtered cobalt-alloy films. Journal of Applied Physics, 92 (6). 3223-3230 doi:10.1063/1.1498882
Agazzi, L., Bennett, S., Berry, F. J., Carbucicchio, M., Rateo, M., Ruggiero, G., Turilli, G. (2002) Magnetic interactions and interface properties in Co/Fe multilayers. Journal of Applied Physics, 92 (6). 3231-3234 doi:10.1063/1.1499203
Sun, Young, Salamon, M. B., Chun, S. H. (2002) Magnetocaloric effect and temperature coefficient of resistance of La2/3(Ca,Pb)1/3MnO3. Journal of Applied Physics, 92 (6). 3235-3238 doi:10.1063/1.1502914
Goldobin, E., Klushin, A. M., Siegel, M., Klein, N. (2002) Long Josephson junction embedded into a planar resonator at microwave frequencies: Numerical simulation of fluxon dynamics. Journal of Applied Physics, 92 (6). 3239-3250 doi:10.1063/1.1497466
Santos, I. A., Spı́nola, D. U., Garcia, D., Eiras, J. A. (2002) Dielectric behavior and diffuse phase transition features of rare earth doped Sr0.61Ba0.39Nb2O6 ferroelectric ceramics. Journal of Applied Physics, 92 (6). 3251-3256 doi:10.1063/1.1481210
Boubekeur, H., Mikolajick, T., Pamler, W., Höpfner, J., Frey, L., Ryssel, H. (2002) Platinum contamination issues in ferroelectric memories. Journal of Applied Physics, 92 (6). 3257-3265 doi:10.1063/1.1500414
Ragini, , Ranjan, Rajeev, Mishra, S. K., Pandey, Dhananjai (2002) Room temperature structure of Pb(ZrxTi1−xO3) around the morphotropic phase boundary region: A Rietveld study. Journal of Applied Physics, 92 (6). 3266-3274 doi:10.1063/1.1483921
Stanishevsky, A., Nagaraj, B., Melngailis, J., Ramesh, R., Khriachtchev, L., McDaniel, E. (2002) Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors. Journal of Applied Physics, 92 (6). 3275-3278 doi:10.1063/1.1489069
Yang, Xi, Wood, Lowell T., Miller, John H. (2002) Electric-field imaging using optical techniques. Journal of Applied Physics, 92 (6). 3279-3282 doi:10.1063/1.1503386
Park, J. H., Yoon, K. S., Yang, J. Y., Kim, E. K., Lee, C. H., Kim, C. O., Hong, J. P. (2002) Surface plasmon resonance measurement of AlOx insulating barriers in magnetic tunnel junctions formed by remote rf plasma oxidation process. Journal of Applied Physics, 92 (6). 3283-3286 doi:10.1063/1.1498957
Wong, C. K., Poon, Y. M., Shin, F. G. (2002) Temperature dependence of the complex effective piezoelectric coefficient of ferroelectric 0-3 composites. Journal of Applied Physics, 92 (6). 3287-3292 doi:10.1063/1.1503388
Zhang, X. T., Liu, Y. C., Zhang, L. G., Zhang, J. Y., Lu, Y. M., Shen, D. Z., Xu, W., Zhong, G. Z., Fan, X. W., Kong, X. G. (2002) Structure and optically pumped lasing from nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films. Journal of Applied Physics, 92 (6). 3293-3298 doi:10.1063/1.1498958
Ducati, Caterina, Alexandrou, Ioannis, Chhowalla, Manish, Amaratunga, Gehan A. J., Robertson, John (2002) Temperature selective growth of carbon nanotubes by chemical vapor deposition. Journal of Applied Physics, 92 (6). 3299-3303 doi:10.1063/1.1499746
Balamurugan, B., Mehta, B. R., Avasthi, D. K., Singh, Fouran, Arora, Akhilesh K., Rajalakshmi, M., Raghavan, G., Tyagi, A. K., Shivaprasad, S. M. (2002) Modifying the nanocrystalline characteristics—structure, size, and surface states of copper oxide thin films by high-energy heavy-ion irradiation. Journal of Applied Physics, 92 (6). 3304-3310 doi:10.1063/1.1499752
Gupta, S., Weiss, B. L., Weiner, B. R., Pilione, L., Badzian, A., Morell, G. (2002) Electron field emission properties of gamma irradiated microcrystalline diamond and nanocrystalline carbon thin films. Journal of Applied Physics, 92 (6). 3311-3317 doi:10.1063/1.1499996
Araki, Takeshi, Niwa, Toshiharu, Yamada, Yutaka, Hirabayashi, Izumi, Shibata, Junko, Ikuhara, Yuichi, Kato, Kazumi, Kato, Takeharu, Hirayama, Tsukasa (2002) Growth model and the effect of CuO nanocrystallites on the properties of chemically derived epitaxial thin films of YBa2Cu3O7−x. Journal of Applied Physics, 92 (6). 3318-3325 doi:10.1063/1.1499985
Oh, Jaehwan, Nemanich, R. J. (2002) Current–voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy. Journal of Applied Physics, 92 (6). 3326-3331 doi:10.1063/1.1499545
Oh, Jaehwan, Meunier, Vincent, Ham, Hoon, Nemanich, R. J. (2002) Single electron tunneling of nanoscale TiSi2 islands on Si. Journal of Applied Physics, 92 (6). 3332-3337 doi:10.1063/1.1499531
Yu, Suzhu, Wong, Terence K. S., Pita, Kantisara, Hu, Xiao, Ligatchev, Valeri (2002) Surface modified silica mesoporous films as a low dielectric constant intermetal dielectric. Journal of Applied Physics, 92 (6). 3338-3344 doi:10.1063/1.1499979
Filatov, Alexei V., Maslen, Eric H., Gillies, George T. (2002) Stability of an electrodynamic suspension. Journal of Applied Physics, 92 (6). 3345-3353 doi:10.1063/1.1503174
Rekveldt, M. Theo, Bouwman, Wim G., Kraan, Wicher H. (2002) Magnetized foils as π flippers in neutron spin-echo spectrometry. Journal of Applied Physics, 92 (6). 3354-3362 doi:10.1063/1.1499751
Jang, Inkook, Phillips, Roshenda, Sinnott, Susan B. (2002) Study of C3H5+ ion deposition on polystyrene and polyethylene surfaces using molecular dynamics simulations. Journal of Applied Physics, 92 (6). 3363-3367 doi:10.1063/1.1500788
McHale, G., Martin, F., Newton, M. I. (2002) Mass sensitivity of acoustic wave devices from group and phase velocity measurements. Journal of Applied Physics, 92 (6). 3368-3373 doi:10.1063/1.1499750
Wu, X., Thomas, J. R., Davis, W. A. (2002) Control of thermal runaway in microwave resonant cavities. Journal of Applied Physics, 92 (6). 3374-3380 doi:10.1063/1.1501744
Sandell, A., Anderson, M. P., Alfredsson, Y., Johansson, M. K.-J., Schnadt, J., Rensmo, H., Siegbahn, H., Uvdal, P. (2002) Titanium dioxide thin-film growth on silicon (111) by chemical vapor deposition of titanium(IV) isopropoxide. Journal of Applied Physics, 92 (6). 3381-3387 doi:10.1063/1.1501751
Cai, M., Qiao, D., Yu, L. S., Lau, S. S., Li, C. P., Hung, L. S., Haynes, Tony E., Henttinen, K., Suni, Ilkka, Poon, V. M. C., Marek, T., Mayer, J. W. (2002) Single crystal Si layers on glass formed by ion cutting. Journal of Applied Physics, 92 (6). 3388-3392 doi:10.1063/1.1492017
Nakamura, Eri, Hirakuri, Kenji K., Ohyama, Manabu, Friedbacher, Gernot, Mutsukura, Nobuki (2002) High quality chemical vapor deposition diamond growth on iron and stainless steel substrates. Journal of Applied Physics, 92 (6). 3393-3396 doi:10.1063/1.1502917
Butcher, K. S. A., Timmers, H., Afifuddin, , Chen, Patrick P.-T., Weijers, T. D. M., Goldys, E. M., Tansley, T. L., Elliman, R. G., Freitas, J. A. (2002) Crystal size and oxygen segregation for polycrystalline GaN. Journal of Applied Physics, 92 (6). 3397-3403 doi:10.1063/1.1499232
Yasuda, Masaaki, Yamauchi, Shunji, Kawata, Hiroaki, Murata, Kenji (2002) Quantitative electron microprobe analysis of aluminum, copper, and gold thin films on silicon substrates. Journal of Applied Physics, 92 (6). 3404-3409 doi:10.1063/1.1502923
Tsia, J. M., Ling, C. C., Beling, C. D., Fung, S. (2002) Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements. Journal of Applied Physics, 92 (6). 3410-3412 doi:10.1063/1.1503162
Lakshmikumar, S. T., Singh, P. K. (2002) Formation of carbonized porous silicon surfaces by thermal and optically induced reaction with acetylene. Journal of Applied Physics, 92 (6). 3413-3415 doi:10.1063/1.1497464
Ashizawa, Yoshito, Saito, Shin, Takahashi, Migaku (2002) Publisher’s Note: “Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering” [J. Appl. Phys. 91, 8096 (2002)]. Journal of Applied Physics, 92 (6). 3416 doi:10.1063/1.1505649

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