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Pichaud, B., Burle, N., Texier, M., Alfonso, C., Gailhanou, M., Thibault-Pénisson, J., Fontaine, C., Vdovin, V. I. (2009) Dislocation nucleation in heteroepitaxial semiconducting films. physica status solidi (c), 6 (8). 1827-1835 doi:10.1002/pssc.200881469

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Reference TypeJournal (article/letter/editorial)
TitleDislocation nucleation in heteroepitaxial semiconducting films
Journalphysica status solidi (c)
AuthorsPichaud, B.Author
Burle, N.Author
Texier, M.Author
Alfonso, C.Author
Gailhanou, M.Author
Thibault-Pénisson, J.Author
Fontaine, C.Author
Vdovin, V. I.Author
Year2009 (August)Volume6
Issue8
PublisherWiley
DOIdoi:10.1002/pssc.200881469Search in ResearchGate
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Mindat Ref. ID5118932Long-form Identifiermindat:1:5:5118932:1
GUID0
Full ReferencePichaud, B., Burle, N., Texier, M., Alfonso, C., Gailhanou, M., Thibault-Pénisson, J., Fontaine, C., Vdovin, V. I. (2009) Dislocation nucleation in heteroepitaxial semiconducting films. physica status solidi (c), 6 (8). 1827-1835 doi:10.1002/pssc.200881469
Plain TextPichaud, B., Burle, N., Texier, M., Alfonso, C., Gailhanou, M., Thibault-Pénisson, J., Fontaine, C., Vdovin, V. I. (2009) Dislocation nucleation in heteroepitaxial semiconducting films. physica status solidi (c), 6 (8). 1827-1835 doi:10.1002/pssc.200881469
In(2009, August) physica status solidi (c) Vol. 6 (8) Wiley

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Pichaud, B., Putero, M., Burle, N. (1999) Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems. physica status solidi (a), 171 (1). 251-265 doi:10.1002/(sici)1521-396x(199901)171:1<251::aid-pssa251>3.0.co;2-9
Burle, N., Pichaud, B., Guelton, N., Saint-Jacques, R. G. (1995) X-ray topographic identification of dislocation nucleation mechanisms in the heteroepitaxial system GaAs/Ge. physica status solidi (a), 149 (1). 123-129 doi:10.1002/pssa.2211490109
Pichaud, B, Burle, N, Putero-Vuaroqueaux, M, Curtil, C (2002) Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films. Journal of Physics: Condensed Matter, 14 (48). 13255-13267 doi:10.1088/0953-8984/14/48/376
Idrissi, H., Regula, G., Lancin, M., Douin, J., Pichaud, B. (2005) Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending. physica status solidi (c), 2 (6). 1998-2003 doi:10.1002/pssc.200460544
Feklisova, O. V., Yakimov, E. B. (2009) Effect of dislocation trails on gold diffusion in Si. physica status solidi (c), 6 (8). 1823-1826 doi:10.1002/pssc.200881443
(2009) Contents: Phys. Status Solidi C 6/8. physica status solidi (c), 6 (8). 1793-1796 doi:10.1002/pssc.200960066
Shevchenko, S. A., Izotov, A. N. (2005) Dislocation photoluminescence in silicon crystals of various impurity contents. physica status solidi (c), 2 (6). 1827-1831 doi:10.1002/pssc.200460551
Yarykin, N., Hieckmann, E., Vdovin, V. I. (2007) Oxygen gettering at defects introduced by plastic deformation in silicon. physica status solidi (c), 4 (8). 3070-3074 doi:10.1002/pssc.200675455
Sheregii, E. M. (2009) Preface: Phys. Status Solidi C 6/9. physica status solidi (c), 6 (9). 1997 doi:10.1002/pssc.200960070
De Luca, A., Portavoce, A., Texier, M., Grosjean, C., Burle, N., Oison, V., Pichaud, B. (2014) Tungsten diffusion in silicon. Journal of Applied Physics, 115 (1). 13501pp. doi:10.1063/1.4859455
Jasinski, J. (2005) Classic and novel methods of dislocation reduction in heteroepitaxial nitride layers. physica status solidi (c), 2 (3). 941 doi:10.1002/pssc.200590002
 
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