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De Luca, A., Portavoce, A., Texier, M., Grosjean, C., Burle, N., Oison, V., Pichaud, B. (2014) Tungsten diffusion in silicon. Journal of Applied Physics, 115 (1). 13501pp. doi:10.1063/1.4859455

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Reference TypeJournal (article/letter/editorial)
TitleTungsten diffusion in silicon
JournalJournal of Applied Physics
AuthorsDe Luca, A.Author
Portavoce, A.Author
Texier, M.Author
Grosjean, C.Author
Burle, N.Author
Oison, V.Author
Pichaud, B.Author
Year2014 (January 7)Volume115
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.4859455Search in ResearchGate
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Mindat Ref. ID5196103Long-form Identifiermindat:1:5:5196103:5
GUID0
Full ReferenceDe Luca, A., Portavoce, A., Texier, M., Grosjean, C., Burle, N., Oison, V., Pichaud, B. (2014) Tungsten diffusion in silicon. Journal of Applied Physics, 115 (1). 13501pp. doi:10.1063/1.4859455
Plain TextDe Luca, A., Portavoce, A., Texier, M., Grosjean, C., Burle, N., Oison, V., Pichaud, B. (2014) Tungsten diffusion in silicon. Journal of Applied Physics, 115 (1). 13501pp. doi:10.1063/1.4859455
In(2014, January) Journal of Applied Physics Vol. 115 (1) AIP Publishing

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De Luca, A, Portavoce, A, Texier, M, Burle, N, Pichaud, B (2013) Dynamic segregation of metallic impurities at SiO2/Si interfaces. Journal of Physics: Conference Series, 471. 12029pp. doi:10.1088/1742-6596/471/1/012029
De Luca, Anthony, Texier, Michaël, Portavoce, Alain, Burle, Nelly, Grosjean, Catherine, Morata, Stéphane, Michel, Fabrice (2015) Mechanism of β-FeSi2precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers. Journal of Applied Physics, 117 (11). 115302pp. doi:10.1063/1.4915086
De Luca, Anthony, Burle, Nelly, Portavoce, Alain, Grosjean, Catherine, Morata, Stéphane, Texier, Michaël (2015) Atomic redistribution of implanted Fe and associated defects around moving SiO2/Si interfaces. physica status solidi (c), 12 (8). 1166-1169 doi:10.1002/pssc.201400233
Pichaud, B., Burle, N., Texier, M., Alfonso, C., Gailhanou, M., Thibault-Pénisson, J., Fontaine, C., Vdovin, V. I. (2009) Dislocation nucleation in heteroepitaxial semiconducting films. physica status solidi (c), 6 (8). 1827-1835 doi:10.1002/pssc.200881469
Texier, M, De Luca, A, Pichaud, B, Jublot, M, Tromas, C, Demenet, J-L, Rabier, J (2013) Evidence of perfect dislocation glide in nanoindented 4H-SiC. Journal of Physics: Conference Series, 471. 12013pp. doi:10.1088/1742-6596/471/1/012013
De Luca, Anthony, Portavoce, Alain, Texier, Michaël, Burle, Nelly, Mangelinck, Dominique, Isella, Giovanni (2017) First stages of Ni reaction with the Si(Ge) alloy. Journal of Alloys and Compounds, 695. 2799-2811 doi:10.1016/j.jallcom.2016.11.307
Perrin Toinin, J., Portavoce, A., Texier, M., Bertoglio, M., Hoummada, K. (2016) Te homogeneous precipitation in Ge dislocation loop vicinity. Applied Physics Letters, 108 (23). 232103pp. doi:10.1063/1.4953627
Nicolai, J., Burle, N., Serafino, C., Pichaud, B. (2013) Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles. Journal of Crystal Growth, 372. 138-144 doi:10.1016/j.jcrysgro.2013.03.041
Texier, M, Pichaud, B, Beaufort, M-F, Barbot, J-F (2013) Structural disordering and extended defects produced by He-implantation in silicon carbide. Journal of Physics D: Applied Physics, 46. 485105pp. doi:10.1088/0022-3727/46/48/485105
Pichaud, B., Putero, M., Burle, N. (1998) Relaxation of low mismatched semiconducting layers by misfit dislocations : models and observations. Le Journal de Physique IV, 8. doi:10.1051/jp4:1998428
Correia, A., Pichaud, B., Lhorte, A., Quoirin, J. B. (1996) Platinum gettering in silicon by silicon phosphide precipitates. Journal of Applied Physics, 79 (4). 2145-2147 doi:10.1063/1.361040
 
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