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De Luca, Anthony, Texier, Michaël, Portavoce, Alain, Burle, Nelly, Grosjean, Catherine, Morata, Stéphane, Michel, Fabrice (2015) Mechanism of β-FeSi2precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers. Journal of Applied Physics, 117 (11). 115302pp. doi:10.1063/1.4915086

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Reference TypeJournal (article/letter/editorial)
TitleMechanism of β-FeSi2precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers
JournalJournal of Applied Physics
AuthorsDe Luca, AnthonyAuthor
Texier, MichaëlAuthor
Portavoce, AlainAuthor
Burle, NellyAuthor
Grosjean, CatherineAuthor
Morata, StéphaneAuthor
Michel, FabriceAuthor
Year2015 (March 21)Volume117
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.4915086Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200644Long-form Identifiermindat:1:5:5200644:1
GUID0
Full ReferenceDe Luca, Anthony, Texier, Michaël, Portavoce, Alain, Burle, Nelly, Grosjean, Catherine, Morata, Stéphane, Michel, Fabrice (2015) Mechanism of β-FeSi2precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers. Journal of Applied Physics, 117 (11). 115302pp. doi:10.1063/1.4915086
Plain TextDe Luca, Anthony, Texier, Michaël, Portavoce, Alain, Burle, Nelly, Grosjean, Catherine, Morata, Stéphane, Michel, Fabrice (2015) Mechanism of β-FeSi2precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers. Journal of Applied Physics, 117 (11). 115302pp. doi:10.1063/1.4915086
In(2015, March) Journal of Applied Physics Vol. 117 (11) AIP Publishing

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De Luca, Anthony, Burle, Nelly, Portavoce, Alain, Grosjean, Catherine, Morata, Stéphane, Texier, Michaël (2015) Atomic redistribution of implanted Fe and associated defects around moving SiO2/Si interfaces. physica status solidi (c), 12 (8). 1166-1169 doi:10.1002/pssc.201400233
De Luca, Anthony, Portavoce, Alain, Texier, Michaël, Burle, Nelly, Mangelinck, Dominique, Isella, Giovanni (2017) First stages of Ni reaction with the Si(Ge) alloy. Journal of Alloys and Compounds, 695. 2799-2811 doi:10.1016/j.jallcom.2016.11.307
De Luca, A., Portavoce, A., Texier, M., Grosjean, C., Burle, N., Oison, V., Pichaud, B. (2014) Tungsten diffusion in silicon. Journal of Applied Physics, 115 (1). 13501pp. doi:10.1063/1.4859455
De Luca, A, Portavoce, A, Texier, M, Burle, N, Pichaud, B (2013) Dynamic segregation of metallic impurities at SiO2/Si interfaces. Journal of Physics: Conference Series, 471. 12029pp. doi:10.1088/1742-6596/471/1/012029
Queisser, H. J., Van Loon, P. G. G. (1964) Growth of Lattice Defects in Silicon during Oxidation. Journal of Applied Physics, 35 (10). 3066-3067 doi:10.1063/1.1713179
Oh, Seajin, Tiller, W. A., Hahn, SooKap (1986) Effect of HCl on silicon point defect formation during thermal oxidation of (100) float zone silicon wafers. Applied Physics Letters, 48 (17). 1125-1126 doi:10.1063/1.96444
Grant, N. E., Rougieux, F. E., Macdonald, D., Bullock, J., Wan, Y. (2015) Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers. Journal of Applied Physics, 117 (5). 55711pp. doi:10.1063/1.4907804
Bentini, G. G., Correra, L., Donolato, C. (1984) Defects introduced in silicon wafers during rapid isothermal annealing: Thermoelastic and thermoplastic effects. Journal of Applied Physics, 56 (10). 2922-2929 doi:10.1063/1.333832
Hirth, John P., Tiller, William A. (1984) Ledge growth, strain accommodation, and stacking fault formation during silicon oxidation. Journal of Applied Physics, 56 (4). 947-952 doi:10.1063/1.334033
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