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Johnson, Brian J., Capano, Michael A. (2004) Mechanism of ohmic behavior of Al/Ti contacts top-type 4H-SiC after annealing. Journal of Applied Physics, 95 (10). 5616-5620 doi:10.1063/1.1707215

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Reference TypeJournal (article/letter/editorial)
TitleMechanism of ohmic behavior of Al/Ti contacts top-type 4H-SiC after annealing
JournalJournal of Applied Physics
AuthorsJohnson, Brian J.Author
Capano, Michael A.Author
Year2004 (May 15)Volume95
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1707215Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5124232Long-form Identifiermindat:1:5:5124232:9
GUID0
Full ReferenceJohnson, Brian J., Capano, Michael A. (2004) Mechanism of ohmic behavior of Al/Ti contacts top-type 4H-SiC after annealing. Journal of Applied Physics, 95 (10). 5616-5620 doi:10.1063/1.1707215
Plain TextJohnson, Brian J., Capano, Michael A. (2004) Mechanism of ohmic behavior of Al/Ti contacts top-type 4H-SiC after annealing. Journal of Applied Physics, 95 (10). 5616-5620 doi:10.1063/1.1707215
In(2004, May) Journal of Applied Physics Vol. 95 (10) AIP Publishing

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Tsukimoto, S., Sakai, T., Murakami, Masanori (2004) Electrical properties and microstructure of ternary Ge∕Ti∕Al ohmic contacts to p-type 4H–SiC. Journal of Applied Physics, 96 (9). 4976-4981 doi:10.1063/1.1797546
Okojie, R. S., Lukco, D. (2016) Simultaneous ohmic contacts to p- and n-type 4H-SiC by phase segregation annealing of co-sputtered Pt-Ti. Journal of Applied Physics, 120 (21). 215301pp. doi:10.1063/1.4968572
Vivona, M., Greco, G., Lo Nigro, R., Bongiorno, C., Roccaforte, F. (2015) Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC. Journal of Applied Physics, 118 (3). 35705pp. doi:10.1063/1.4927271
Sakai, T., Nitta, K., Tsukimoto, S., Moriyama, M., Murakami, Masanori (2004) Ternary TiAlGe ohmic contacts for p-type 4H-SiC. Journal of Applied Physics, 95 (4). 2187-2189 doi:10.1063/1.1643772
Yu, Hailong, Zhang, Xufang, Shen, Huajun, Tang, Yidan, Bai, Yun, Wu, Yudong, Liu, Kean, Liu, Xinyu (2015) Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC. Journal of Applied Physics, 117 (2). 25703pp. doi:10.1063/1.4905832
Mohammad, F. A., Cao, Y., Chang, K.-C., Porter, L. M. (2005) Comparison of Pt-Based Ohmic Contacts with Ti–Al Ohmic Contacts forp-Type SiC. Japanese Journal of Applied Physics, 44 (8) 5933-5938 doi:10.1143/jjap.44.5933
Frazzetto, A, Giannazzo, F, Nigro, R Lo, Raineri, V, Roccaforte, F (2011) Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature. Journal of Physics D: Applied Physics, 44. 255302pp. doi:10.1088/0022-3727/44/25/255302
Okojie, Robert S., Lukco, Dorothy, Chen, Yuanliang L., Spry, David J. (2002) Reliability assessment of Ti/TaSi[sub 2]/Pt ohmic contacts on SiC after 1000 h at 600 °C. Journal of Applied Physics, 91 (10). 6553pp. doi:10.1063/1.1470255
Huang, Lingqin, Liu, Bingbing, Zhu, Qiaozhi, Chen, Suhua, Gao, Mingchao, Qin, Fuwen, Wang, Dejun (2012) Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing. Applied Physics Letters, 100 (26). 263503pp. doi:10.1063/1.4730435
Papanicolaou, N. A., Edwards, A., Rao, M. V., Anderson, W. T. (1998) Si/Pt Ohmic contacts to p-type 4H–SiC. Applied Physics Letters, 73 (14). 2009-2011 doi:10.1063/1.122351
Tamaso, Hideto, Yamada, Shunsuke, Kitabayashi, Hiroyuki, Horii, Taku (2014) Ti/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiC. Materials Science Forum, 778. 669-672 doi:10.4028/www.scientific.net/msf.778-780.669
 
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