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Yu, Hailong, Zhang, Xufang, Shen, Huajun, Tang, Yidan, Bai, Yun, Wu, Yudong, Liu, Kean, Liu, Xinyu (2015) Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC. Journal of Applied Physics, 117 (2). 25703pp. doi:10.1063/1.4905832

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Reference TypeJournal (article/letter/editorial)
TitleThermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC
JournalJournal of Applied Physics
AuthorsYu, HailongAuthor
Zhang, XufangAuthor
Shen, HuajunAuthor
Tang, YidanAuthor
Bai, YunAuthor
Wu, YudongAuthor
Liu, KeanAuthor
Liu, XinyuAuthor
Year2015 (January 14)Volume117
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.4905832Search in ResearchGate
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Mindat Ref. ID5201780Long-form Identifiermindat:1:5:5201780:9
GUID0
Full ReferenceYu, Hailong, Zhang, Xufang, Shen, Huajun, Tang, Yidan, Bai, Yun, Wu, Yudong, Liu, Kean, Liu, Xinyu (2015) Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC. Journal of Applied Physics, 117 (2). 25703pp. doi:10.1063/1.4905832
Plain TextYu, Hailong, Zhang, Xufang, Shen, Huajun, Tang, Yidan, Bai, Yun, Wu, Yudong, Liu, Kean, Liu, Xinyu (2015) Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC. Journal of Applied Physics, 117 (2). 25703pp. doi:10.1063/1.4905832
In(2015, January) Journal of Applied Physics Vol. 117 (2) AIP Publishing

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Vivona, M., Greco, G., Lo Nigro, R., Bongiorno, C., Roccaforte, F. (2015) Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC. Journal of Applied Physics, 118 (3). 35705pp. doi:10.1063/1.4927271
Tsukimoto, S., Sakai, T., Murakami, Masanori (2004) Electrical properties and microstructure of ternary Ge∕Ti∕Al ohmic contacts to p-type 4H–SiC. Journal of Applied Physics, 96 (9). 4976-4981 doi:10.1063/1.1797546
Johnson, Brian J., Capano, Michael A. (2004) Mechanism of ohmic behavior of Al/Ti contacts top-type 4H-SiC after annealing. Journal of Applied Physics, 95 (10). 5616-5620 doi:10.1063/1.1707215
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Kong, Xin, Wei, Ke, Liu, Guoguo, Liu, Xinyu (2012) Role of Ti/Al relative thickness in the formation mechanism of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures. Journal of Physics D: Applied Physics, 45. 265101pp. doi:10.1088/0022-3727/45/26/265101
Han, Lin-Chao, Shen, Hua-Jun, Liu, Ke-An, Wang, Yi-Yu, Tang, Yi-Dan, Bai, Yun, Xu, Heng-Yu, Wu, Yu-Dong, Liu, Xin-Yu (2014) Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts. Chinese Physics B, 23. 127302pp. doi:10.1088/1674-1056/23/12/127302
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Liu, Sam, Potts, Gregory, Scofield, James D. (2000) Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC. Materials Science Forum, 338. 1021-1024 doi:10.4028/www.scientific.net/msf.338-342.1021
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