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Liu, Sam, Potts, Gregory, Scofield, James D. (2000) Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC. Materials Science Forum, 338. 1021-1024 doi:10.4028/www.scientific.net/msf.338-342.1021

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Reference TypeJournal (article/letter/editorial)
TitleThermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC
JournalMaterials Science Forum
AuthorsLiu, SamAuthor
Potts, GregoryAuthor
Scofield, James D.Author
Year2000 (May)Volume338
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.338-342.1021Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9849574Long-form Identifiermindat:1:5:9849574:0
GUID0
Full ReferenceLiu, Sam, Potts, Gregory, Scofield, James D. (2000) Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC. Materials Science Forum, 338. 1021-1024 doi:10.4028/www.scientific.net/msf.338-342.1021
Plain TextLiu, Sam, Potts, Gregory, Scofield, James D. (2000) Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC. Materials Science Forum, 338. 1021-1024 doi:10.4028/www.scientific.net/msf.338-342.1021
In(2000) Materials Science Forum Vol. 338. Trans Tech Publications, Ltd.

See Also

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Liu, Shi Zhong, Scofield, James D. (1998) Ohmic Contacts to p-Type SiC with Improved Thermal Stability. Materials Science Forum, 264. 791-794 doi:10.4028/www.scientific.net/msf.264-268.791
Tsao, Bang Hung, Liu, Sam, Scofield, James D. (2004) Improved AlNi Ohmic Contacts to p-Type SiC. Materials Science Forum, 457. 841-844 doi:10.4028/www.scientific.net/msf.457-460.841
Kassamakova, Liliana, Kakanakov, Roumen, Kassamakov, Ivan, Nordell, Nils, Savage, Susan, Svedberg, Erik B., Madsen, Lynnette D. (2000) Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices. Materials Science Forum, 338. 1009-1012 doi:10.4028/www.scientific.net/msf.338-342.1009
Tsao, Bang Hung, Lawson, Jacob, Scofield, James D. (2006) Ti/AlNi/W and Ti/Ni2Si/W Ohmic Contacts to P-Type SiC. Materials Science Forum, 527. 903-906 doi:10.4028/www.scientific.net/msf.527-529.903
Vassilevski, Konstantin, Zekentes, Konstantinos, Konstantinidis, George, Papanicolaou, N., Nikitina, Irina P., Babanin, A.I. (2000) Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions. Materials Science Forum, 338. 1017-1020 doi:10.4028/www.scientific.net/msf.338-342.1017
Luo, Yan Bin, Yan, Feng, Tone, Kiyoshi, Zhao, Jian Hui, Crofton, John (2000) Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC. Materials Science Forum, 338. 1013-1016 doi:10.4028/www.scientific.net/msf.338-342.1013
Toda, Tadao, Ueda, Yasuhiro, Sawada, Minoru (2000) Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N2 Gas, and Application to a UV Sensor. Materials Science Forum, 338. 989-992 doi:10.4028/www.scientific.net/msf.338-342.989
Kang, Soo Chang, Shin, Moo Whan (2000) Adhesion and Microstructure of Ni Contacts to 3C-SiC. Materials Science Forum, 338. 993-996 doi:10.4028/www.scientific.net/msf.338-342.993
Nakashima, Koichi, Eryu, Osamu, Ukai, S., Yoshida, K., Watanabe, Masanori (2000) Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing. Materials Science Forum, 338. 1005-1008 doi:10.4028/www.scientific.net/msf.338-342.1005
Oder, T.N., Williams, John R., Bryant, K.W., Bozack, M.J., Crofton, John (2000) Low Resistance Ohmic Contacts to n-SiC Using Niobium. Materials Science Forum, 338. 997-1000 doi:10.4028/www.scientific.net/msf.338-342.997
Nakamura, Tomonori, Shimada, Hisanori, Satoh, Masataka (2000) Ohmic Contact Formation on n-Type 6H-SiC using NiSi2. Materials Science Forum, 338. 985-988 doi:10.4028/www.scientific.net/msf.338-342.985
 
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