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Johnson, S., Markwitz, A., Rudolphi, M., Baumann, H. (2004) Nanostructuring of silicon (100) using electron beam rapid thermal annealing. Journal of Applied Physics, 96 (1). 605-609 doi:10.1063/1.1756695

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Reference TypeJournal (article/letter/editorial)
TitleNanostructuring of silicon (100) using electron beam rapid thermal annealing
JournalJournal of Applied Physics
AuthorsJohnson, S.Author
Markwitz, A.Author
Rudolphi, M.Author
Baumann, H.Author
Year2004 (July)Volume96
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1756695Search in ResearchGate
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Mindat Ref. ID5127316Long-form Identifiermindat:1:5:5127316:1
GUID0
Full ReferenceJohnson, S., Markwitz, A., Rudolphi, M., Baumann, H. (2004) Nanostructuring of silicon (100) using electron beam rapid thermal annealing. Journal of Applied Physics, 96 (1). 605-609 doi:10.1063/1.1756695
Plain TextJohnson, S., Markwitz, A., Rudolphi, M., Baumann, H. (2004) Nanostructuring of silicon (100) using electron beam rapid thermal annealing. Journal of Applied Physics, 96 (1). 605-609 doi:10.1063/1.1756695
In(2004, July) Journal of Applied Physics Vol. 96 (1) AIP Publishing

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Markwitz, A., Johnson, S., Rudolphi, M., Baumann, H., Mücklich, A. (2005) Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing. Applied Physics Letters, 86 (1). 13108pp. doi:10.1063/1.1846953
Johnson, S., Markwitz, A., Rudolphi, M., Baumann, H., Kuo, P.-Y., Blaikie, R., Mücklich, A. (2005) Effect of crystal orientation on self-assembled silicon nanostructures formed by electron-beam annealing. Journal of Applied Physics, 97 (9). 94301pp. doi:10.1063/1.1877819
Markwitz, A., Johnson, S., Rudolphi, M. (2006) Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing. Applied Physics Letters, 89 (15). 153122pp. doi:10.1063/1.2361162
Markwitz, A., Baumann, H., Krimmel, E. F., Bethge, K., Grill, W. (1994) Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing. Applied Physics Letters, 64 (20). 2652-2654 doi:10.1063/1.111481
Johnson, S., Markwitz, A., Rudolphi, M., Baumann, H., Oei, S. P., Teo, K. B. K., Milne, W. I. (2004) Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon. Applied Physics Letters, 85 (15). 3277-3279 doi:10.1063/1.1804604
Markwitz, A., Kennedy, V.J., Johnson, S., Trompetter, W.J., Rudolphi, M., Baumann, H. (2004) SiC nanoboulders on silicon – a nuclear reaction analysis study of low energy 13C implanted and subsequently electron beam annealed (100) silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 217 (4). 583-588 doi:10.1016/j.nimb.2003.12.072
Markwitz, Andreas, Davy, Perry, Kennedy, John, Baumann, Horst (2008) Nanostructuring at the surface of low-energy lead-implanted silicon by electron beam annealing. Surface and Interface Analysis, 40 (5). 931-934 doi:10.1002/sia.2805
Schmidt, H., Borchardt, G., Rudolphi, M., Baumann, H., Bruns, M. (2004) Nitrogen self-diffusion in silicon nitride thin films probed with isotope heterostructures. Applied Physics Letters, 85 (4). 582-584 doi:10.1063/1.1769594
Rudolphi, M., Markwitz, A., Baumann, H. (2007) Surface cavities produced by high-dose nitrogen ion implantation into silicon. Surface and Interface Analysis, 39 (8). 698-701 doi:10.1002/sia.2579
Markwitz, A., Lucas, F., Rusterucci, J., Kennedy, J., Trompetter, W.J., Rudolphi, M., Ryan, M., White, V., Johnson, S. (2006) A nuclear reaction analysis and optical microscopy study on controlled growth of large SiC nanocrystals on Si formed by low-energy ion implantation and electron beam annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 249 (1). 105-108 doi:10.1016/j.nimb.2006.03.091
Markwitz, A., Kennedy, V.J., Baumann, H. (2003) Formation of micrometer sized crater shaped pits in silicon by low-energy 22Ne+ implantation and electron beam annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 206. 179-183 doi:10.1016/s0168-583x(03)00719-5
 
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