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Markwitz, A., Johnson, S., Rudolphi, M. (2006) Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing. Applied Physics Letters, 89 (15). 153122pp. doi:10.1063/1.2361162

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Reference TypeJournal (article/letter/editorial)
TitleSimultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing
JournalApplied Physics Letters
AuthorsMarkwitz, A.Author
Johnson, S.Author
Rudolphi, M.Author
Year2006 (October 9)Volume89
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2361162Search in ResearchGate
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Mindat Ref. ID8550052Long-form Identifiermindat:1:5:8550052:9
GUID0
Full ReferenceMarkwitz, A., Johnson, S., Rudolphi, M. (2006) Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing. Applied Physics Letters, 89 (15). 153122pp. doi:10.1063/1.2361162
Plain TextMarkwitz, A., Johnson, S., Rudolphi, M. (2006) Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing. Applied Physics Letters, 89 (15). 153122pp. doi:10.1063/1.2361162
In(2006, October) Applied Physics Letters Vol. 89 (15) AIP Publishing

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Markwitz, A., Johnson, S., Rudolphi, M., Baumann, H., Mücklich, A. (2005) Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing. Applied Physics Letters, 86 (1). 13108pp. doi:10.1063/1.1846953
Johnson, S., Markwitz, A., Rudolphi, M., Baumann, H., Kuo, P.-Y., Blaikie, R., Mücklich, A. (2005) Effect of crystal orientation on self-assembled silicon nanostructures formed by electron-beam annealing. Journal of Applied Physics, 97 (9). 94301pp. doi:10.1063/1.1877819
Johnson, S., Markwitz, A., Rudolphi, M., Baumann, H. (2004) Nanostructuring of silicon (100) using electron beam rapid thermal annealing. Journal of Applied Physics, 96 (1). 605-609 doi:10.1063/1.1756695
Markwitz, A., Lucas, F., Rusterucci, J., Kennedy, J., Trompetter, W.J., Rudolphi, M., Ryan, M., White, V., Johnson, S. (2006) A nuclear reaction analysis and optical microscopy study on controlled growth of large SiC nanocrystals on Si formed by low-energy ion implantation and electron beam annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 249 (1). 105-108 doi:10.1016/j.nimb.2006.03.091
Johnson, S., Markwitz, A., Rudolphi, M., Baumann, H., Oei, S. P., Teo, K. B. K., Milne, W. I. (2004) Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon. Applied Physics Letters, 85 (15). 3277-3279 doi:10.1063/1.1804604
Fang, Fang, Johnson, Peter B., Kennedy, John, Markwitz, Andreas (2013) Magnetic-ion-doped silicon nanostructures fabricated by ion implantation and electron beam annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 307. 131-136 doi:10.1016/j.nimb.2012.11.071
Steckl, A. J., Mogul, H. C., Mogren, S. (1992) Localized fabrication of Si nanostructures by focused ion beam implantation. Applied Physics Letters, 60 (15). 1833-1835 doi:10.1063/1.107179
Markwitz, A., Kennedy, V.J., Johnson, S., Trompetter, W.J., Rudolphi, M., Baumann, H. (2004) SiC nanoboulders on silicon – a nuclear reaction analysis study of low energy 13C implanted and subsequently electron beam annealed (100) silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 217 (4). 583-588 doi:10.1016/j.nimb.2003.12.072
Rudolphi, M., Markwitz, A., Baumann, H. (2007) Surface cavities produced by high-dose nitrogen ion implantation into silicon. Surface and Interface Analysis, 39 (8). 698-701 doi:10.1002/sia.2579
Borders, J. A., Picraux, S. T., Beezhold, W. (1971) FORMATION OF SiC IN SILICON BY ION IMPLANTATION. Applied Physics Letters, 18 (11). 509-511 doi:10.1063/1.1653516
Markwitz, Andreas, Johnson, Steve, Rudolphi, Mario, Finet, Vincent, Kennedy, John, Barry, Bernard, Trompetter, William (2007) Deuteron microprobe analysis of carbon in the transition region between SiC and Si nanostructures grown on Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 260 (1). 325-328 doi:10.1016/j.nimb.2007.02.042
 
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