Maeda, Tatsuro, Yasuda, Tetsuji, Nishizawa, Masayasu, Miyata, Noriyuki, Morita, Yukinori, Takagi, Shinichi (2006) Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures. Journal of Applied Physics, 100 (1). 14101pp. doi:10.1063/1.2206395
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures | ||
Journal | Journal of Applied Physics | ||
Authors | Maeda, Tatsuro | Author | |
Yasuda, Tetsuji | Author | ||
Nishizawa, Masayasu | Author | ||
Miyata, Noriyuki | Author | ||
Morita, Yukinori | Author | ||
Takagi, Shinichi | Author | ||
Year | 2006 (July) | Volume | 100 |
Issue | 1 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.2206395Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5141337 | Long-form Identifier | mindat:1:5:5141337:0 |
GUID | 0 | ||
Full Reference | Maeda, Tatsuro, Yasuda, Tetsuji, Nishizawa, Masayasu, Miyata, Noriyuki, Morita, Yukinori, Takagi, Shinichi (2006) Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures. Journal of Applied Physics, 100 (1). 14101pp. doi:10.1063/1.2206395 | ||
Plain Text | Maeda, Tatsuro, Yasuda, Tetsuji, Nishizawa, Masayasu, Miyata, Noriyuki, Morita, Yukinori, Takagi, Shinichi (2006) Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures. Journal of Applied Physics, 100 (1). 14101pp. doi:10.1063/1.2206395 | ||
In | (2006, July) Journal of Applied Physics Vol. 100 (1) AIP Publishing |
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