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Maeda, Tatsuro, Nishizawa, Masayasu, Morita, Yukinori, Takagi, Shinichi (2007) Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures. Applied Physics Letters, 90 (7). 72911pp. doi:10.1063/1.2679941

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Reference TypeJournal (article/letter/editorial)
TitleRole of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures
JournalApplied Physics Letters
AuthorsMaeda, TatsuroAuthor
Nishizawa, MasayasuAuthor
Morita, YukinoriAuthor
Takagi, ShinichiAuthor
Year2007 (February 12)Volume90
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2679941Search in ResearchGate
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Mindat Ref. ID8555417Long-form Identifiermindat:1:5:8555417:7
GUID0
Full ReferenceMaeda, Tatsuro, Nishizawa, Masayasu, Morita, Yukinori, Takagi, Shinichi (2007) Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures. Applied Physics Letters, 90 (7). 72911pp. doi:10.1063/1.2679941
Plain TextMaeda, Tatsuro, Nishizawa, Masayasu, Morita, Yukinori, Takagi, Shinichi (2007) Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures. Applied Physics Letters, 90 (7). 72911pp. doi:10.1063/1.2679941
In(2007, February) Applied Physics Letters Vol. 90 (7) AIP Publishing

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Maeda, Tatsuro, Yasuda, Tetsuji, Nishizawa, Masayasu, Miyata, Noriyuki, Morita, Yukinori, Takagi, Shinichi (2004) Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates. Applied Physics Letters, 85 (15). 3181-3183 doi:10.1063/1.1805194
Taoka, Noriyuki, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Takagi, Shinichi (2011) Nature of interface traps in Ge metal-insulator-semiconductor structures with GeO2 interfacial layers. Journal of Applied Physics, 109 (8). 84508pp. doi:10.1063/1.3575332
Kim, Kyoung H., Gordon, Roy G., Ritenour, Andrew, Antoniadis, Dimitri A. (2007) Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-Îș oxide/tungsten nitride gate stacks. Applied Physics Letters, 90 (21). 212104pp. doi:10.1063/1.2741609
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Johnson, Gregory A., Kapoor, Vik J. (1991) Plasma‐deposited germanium nitride gate insulators for indium phosphide metal‐insulator‐semiconductor field‐effect transistors. Journal of Applied Physics, 69 (6). 3616-3622 doi:10.1063/1.348508
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