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Mchedlidze, T., Arguirov, T., Kouteva-Arguirova, S., Kittler, M. (2010) Light induced solid-phase crystallization of Si nanolayers in Si/SiO2 multiple quantum wells. Journal of Applied Physics, 107 (12). 124302pp. doi:10.1063/1.3446831

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Reference TypeJournal (article/letter/editorial)
TitleLight induced solid-phase crystallization of Si nanolayers in Si/SiO2 multiple quantum wells
JournalJournal of Applied Physics
AuthorsMchedlidze, T.Author
Arguirov, T.Author
Kouteva-Arguirova, S.Author
Kittler, M.Author
Year2010 (June 15)Volume107
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.3446831Search in ResearchGate
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Mindat Ref. ID5171572Long-form Identifiermindat:1:5:5171572:8
GUID0
Full ReferenceMchedlidze, T., Arguirov, T., Kouteva-Arguirova, S., Kittler, M. (2010) Light induced solid-phase crystallization of Si nanolayers in Si/SiO2 multiple quantum wells. Journal of Applied Physics, 107 (12). 124302pp. doi:10.1063/1.3446831
Plain TextMchedlidze, T., Arguirov, T., Kouteva-Arguirova, S., Kittler, M. (2010) Light induced solid-phase crystallization of Si nanolayers in Si/SiO2 multiple quantum wells. Journal of Applied Physics, 107 (12). 124302pp. doi:10.1063/1.3446831
In(2010, June) Journal of Applied Physics Vol. 107 (12) AIP Publishing

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Mchedlidze, T., Arguirov, T., Kouteva-Arguirova, S., Kittler, M., Rölver, R., Berghoff, B., Bätzner, D. L., Spangenberg, B. (2008) Light-induced solid-to-solid phase transformation in Si nanolayers ofSi−SiO2multiple quantum wells. Physical Review B, 77 (16) doi:10.1103/physrevb.77.161304
Arguirov, T., Mchedlidze, T., Akhmetov, V.D., Kouteva-Arguirova, S., Kittler, M., Rölver, R., Berghoff, B., Först, M., Bätzner, D.L., Spangenberg, B. (2007) Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells. Applied Surface Science, 254. 1083-1086 doi:10.1016/j.apsusc.2007.07.150
Arguirov, T., Mchedlidze, T., Kittler, M., Rölver, R., Berghoff, B., Först, M., Spangenberg, B. (2006) Residual stress in Si nanocrystals embedded in a SiO2 matrix. Applied Physics Letters, 89 (5). 53111pp. doi:10.1063/1.2260825
Mchedlidze, T., Arguirov, T., Holla, M., Kittler, M. (2009) Electroluminescence from p-i-n structure fabricated using crystalline silicon on glass technology. Journal of Applied Physics, 105 (9). 93107pp. doi:10.1063/1.3124358
Kouteva-Arguirova, S., Arguirov, Tz., Wolfframm, D., Reif, J. (2003) Influence of local heating on micro-Raman spectroscopy of silicon. Journal of Applied Physics, 94 (8). 4946pp. doi:10.1063/1.1611282
Mchedlidze, T., Arguirov, T., Kittler, M., Hoang, T., Holleman, J., Schmitz, J. (2007) Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect. Applied Physics Letters, 91 (20). 201113pp. doi:10.1063/1.2813024
Schmid, R. P., Mankovics, D., Arguirov, T., Ratzke, M., Mchedlidze, T., Kittler, M. (2011) Rapid dislocation-related D1-photoluminescence imaging of multicrystalline Si wafers at room temperature. physica status solidi (a), 208 (4). 888-892 doi:10.1002/pssa.201026269
Schmid, R. P., Mankovics, D., Arguirov, T., Mchedlidze, T., Kittler, M. (2011) Novel imaging techniques for dislocation-related D1-photo-luminescence of multicrystalline Si wafers - two different approaches. physica status solidi (c), 8 (4). 1297-1301 doi:10.1002/pssc.201084023
Hegazy, M. S., Elsayed-Ali, H. E. (2008) Nonthermal laser-induced formation of crystalline Ge quantum dots on Si(100). Journal of Applied Physics, 104 (12). 124302pp. doi:10.1063/1.3041493
Costache, F., Kouteva-Arguirova, S., Reif, J. (2004) Sub–damage–threshold femtosecond laser ablation from crystalline Si: surface nanostructures and phase transformation. Applied Physics A, 79. 1429-1432 doi:10.1007/s00339-004-2803-y
Kittler, M., Arguirov, T., Seifert, W., Yu, X., Jia, G., Vyvenko, O.F., Mchedlidze, T., Reiche, M., Sha, J., Yang, D. (2007) Silicon nanostructures for IR light emitters. Materials Science and Engineering: C, 27. 1252-1259 doi:10.1016/j.msec.2006.09.034
 
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