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Arguirov, T., Mchedlidze, T., Kittler, M., Rölver, R., Berghoff, B., Först, M., Spangenberg, B. (2006) Residual stress in Si nanocrystals embedded in a SiO2 matrix. Applied Physics Letters, 89 (5). 53111pp. doi:10.1063/1.2260825

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Reference TypeJournal (article/letter/editorial)
TitleResidual stress in Si nanocrystals embedded in a SiO2 matrix
JournalApplied Physics Letters
AuthorsArguirov, T.Author
Mchedlidze, T.Author
Kittler, M.Author
Rölver, R.Author
Berghoff, B.Author
Först, M.Author
Spangenberg, B.Author
Year2006 (July 31)Volume89
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2260825Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8552024Long-form Identifiermindat:1:5:8552024:0
GUID0
Full ReferenceArguirov, T., Mchedlidze, T., Kittler, M., Rölver, R., Berghoff, B., Först, M., Spangenberg, B. (2006) Residual stress in Si nanocrystals embedded in a SiO2 matrix. Applied Physics Letters, 89 (5). 53111pp. doi:10.1063/1.2260825
Plain TextArguirov, T., Mchedlidze, T., Kittler, M., Rölver, R., Berghoff, B., Först, M., Spangenberg, B. (2006) Residual stress in Si nanocrystals embedded in a SiO2 matrix. Applied Physics Letters, 89 (5). 53111pp. doi:10.1063/1.2260825
In(2006, July) Applied Physics Letters Vol. 89 (5) AIP Publishing


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