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Arimura, Hiroaki, Oku, Yudai, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2010) Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks. Journal of Applied Physics, 107 (3). 34104pp. doi:10.1063/1.3284952

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Reference TypeJournal (article/letter/editorial)
TitleFabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks
JournalJournal of Applied Physics
AuthorsArimura, HiroakiAuthor
Oku, YudaiAuthor
Saeki, MasayukiAuthor
Kitano, NaomuAuthor
Hosoi, TakujiAuthor
Shimura, TakayoshiAuthor
Watanabe, HeijiAuthor
Year2010 (February)Volume107
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.3284952Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5172012Long-form Identifiermindat:1:5:5172012:8
GUID0
Full ReferenceArimura, Hiroaki, Oku, Yudai, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2010) Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks. Journal of Applied Physics, 107 (3). 34104pp. doi:10.1063/1.3284952
Plain TextArimura, Hiroaki, Oku, Yudai, Saeki, Masayuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2010) Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks. Journal of Applied Physics, 107 (3). 34104pp. doi:10.1063/1.3284952
In(2010, February) Journal of Applied Physics Vol. 107 (3) AIP Publishing

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Saeki, Masayuki, Arimura, Hiroaki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) La Induced Passivation of High-$k$ Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO$_{2}$ Stacks. Japanese Journal of Applied Physics, 50 (10) 10 doi:10.1143/jjap.50.10pa01
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Watanabe, Heiji, Horie, Shinya, Minami, Takashi, Kitano, Naomu, Kosuda, Motomu, Shimura, Takayoshi, Yasutake, Kiyoshi (2007) Impact of Physical Vapor Deposition-BasedIn situFabrication Method on Metal/High-kGate Stacks. Japanese Journal of Applied Physics, 46 (4) 1910-1915 doi:10.1143/jjap.46.1910
Minoura, Yuya, Kasuya, Atsushi, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2013) Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics. Applied Physics Letters, 103 (3). 33502pp. doi:10.1063/1.4813829
 
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