Arimura, Hiroaki, Odake, Yuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film. Applied Physics Letters, 99 (14). 142907pp. doi:10.1063/1.3646378
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film | ||
| Journal | Applied Physics Letters | ||
| Authors | Arimura, Hiroaki | Author | |
| Odake, Yuki | Author | ||
| Kitano, Naomu | Author | ||
| Hosoi, Takuji | Author | ||
| Shimura, Takayoshi | Author | ||
| Watanabe, Heiji | Author | ||
| Year | 2011 (October 3) | Volume | 99 |
| Issue | 14 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3646378Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8596387 | Long-form Identifier | mindat:1:5:8596387:0 |
| GUID | 0 | ||
| Full Reference | Arimura, Hiroaki, Odake, Yuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film. Applied Physics Letters, 99 (14). 142907pp. doi:10.1063/1.3646378 | ||
| Plain Text | Arimura, Hiroaki, Odake, Yuki, Kitano, Naomu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji (2011) Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film. Applied Physics Letters, 99 (14). 142907pp. doi:10.1063/1.3646378 | ||
| In | (2011, October) Applied Physics Letters Vol. 99 (14) AIP Publishing | ||
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