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Lin, Yiheng, Yasuda, Hiroshi, Schiekofer, Manfred, Benna, Bernhard, Wise, Rick, Xia, Guangrui (Maggie) (2014) Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms. Journal of Applied Physics, 116 (14). 144904pp. doi:10.1063/1.4897498

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Reference TypeJournal (article/letter/editorial)
TitleEffects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms
JournalJournal of Applied Physics
AuthorsLin, YihengAuthor
Yasuda, HiroshiAuthor
Schiekofer, ManfredAuthor
Benna, BernhardAuthor
Wise, RickAuthor
Xia, Guangrui (Maggie)Author
Year2014 (October 14)Volume116
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.4897498Search in ResearchGate
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Mindat Ref. ID5199069Long-form Identifiermindat:1:5:5199069:3
GUID0
Full ReferenceLin, Yiheng, Yasuda, Hiroshi, Schiekofer, Manfred, Benna, Bernhard, Wise, Rick, Xia, Guangrui (Maggie) (2014) Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms. Journal of Applied Physics, 116 (14). 144904pp. doi:10.1063/1.4897498
Plain TextLin, Yiheng, Yasuda, Hiroshi, Schiekofer, Manfred, Benna, Bernhard, Wise, Rick, Xia, Guangrui (Maggie) (2014) Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms. Journal of Applied Physics, 116 (14). 144904pp. doi:10.1063/1.4897498
In(2014, October) Journal of Applied Physics Vol. 116 (14) AIP Publishing

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Lin, Yiheng, Yasuda, Hiroshi, Schiekofer, Manfred, Xia, Guangrui (2016) The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C. Journal of Materials Science, 51. 1532-1540 doi:10.1007/s10853-015-9475-1
Lin, Yiheng, Yasuda, Hiroshi, Schiekofer, Manfred, Xia, Guangrui (Maggie) (2015) Coupled dopant diffusion and segregation in inhomogeneous SiGe alloys: Experiments and modeling. Journal of Applied Physics, 117 (21). 214901pp. doi:10.1063/1.4921798
Cai, Feiyang, Anjum, Dalaver H., Zhang, Xixiang, Xia, Guangrui (Maggie) (2016) Study of Si-Ge interdiffusion with phosphorus doping. Journal of Applied Physics, 120 (16). 165108pp. doi:10.1063/1.4966570
Uematsu, Masashi (1997) Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism. Journal of Applied Physics, 82 (5). 2228-2246 doi:10.1063/1.366030
Gao, Xiang, Zhao, Tianshou, Li, Zhigang (2014) Effects of ions on the diffusion coefficient of water in carbon nanotubes. Journal of Applied Physics, 116 (5). 54311pp. doi:10.1063/1.4892484
Parker, T. J. (1967) Diffusion in Silicon. I. Effect of Dislocation Motion on the Diffusion Coefficients of Boron and Phosphorus in Silicon. Journal of Applied Physics, 38 (9). 3471-3474 doi:10.1063/1.1710152
Yakimov, E., Périchaud, I. (1995) Phosphorus diffusion effect on defect structure of silicon with oxygen precipitates revealed by gold diffusion study. Applied Physics Letters, 67 (14). 2054-2056 doi:10.1063/1.115076
Chen, Renyu, Trzynadlowski, Bart, Dunham, Scott T. (2014) Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si. Journal of Applied Physics, 115 (5). 54906pp. doi:10.1063/1.4864377
Hartke, J. L. (1959) Effect of Oxygen in Silicon on Phosphorus Diffusion. Journal of Applied Physics, 30 (9). 1469-1470 doi:10.1063/1.1735376
Nishi, Kenji, Antoniadis, Dimitri A. (1984) Effects of phosphorus diffusion on growth and shrinkage of oxidation‐induced stacking faults. Journal of Applied Physics, 56 (12). 3428-3438 doi:10.1063/1.333909
Lothrop, Robert P. (1962) Diffusion of Phosphorus in Silicon from the Azeotrope of Phosphorus Pentoxide and Water. Journal of Applied Physics, 33 (8). 2656 doi:10.1063/1.1729042
 
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