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Cai, Feiyang, Anjum, Dalaver H., Zhang, Xixiang, Xia, Guangrui (Maggie) (2016) Study of Si-Ge interdiffusion with phosphorus doping. Journal of Applied Physics, 120 (16). 165108pp. doi:10.1063/1.4966570

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Reference TypeJournal (article/letter/editorial)
TitleStudy of Si-Ge interdiffusion with phosphorus doping
JournalJournal of Applied Physics
AuthorsCai, FeiyangAuthor
Anjum, Dalaver H.Author
Zhang, XixiangAuthor
Xia, Guangrui (Maggie)Author
Year2016 (October 28)Volume120
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.4966570Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5205507Long-form Identifiermindat:1:5:5205507:6
GUID0
Full ReferenceCai, Feiyang, Anjum, Dalaver H., Zhang, Xixiang, Xia, Guangrui (Maggie) (2016) Study of Si-Ge interdiffusion with phosphorus doping. Journal of Applied Physics, 120 (16). 165108pp. doi:10.1063/1.4966570
Plain TextCai, Feiyang, Anjum, Dalaver H., Zhang, Xixiang, Xia, Guangrui (Maggie) (2016) Study of Si-Ge interdiffusion with phosphorus doping. Journal of Applied Physics, 120 (16). 165108pp. doi:10.1063/1.4966570
In(2016, October) Journal of Applied Physics Vol. 120 (16) AIP Publishing

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Xia, Guangrui (Maggie), Hoyt, Judy L., Canonico, Michael (2007) Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 101 (4). 44901pp. doi:10.1063/1.2430904
Xia, Guangrui, Hoyt, Judy L. (2010) Si–Ge interdiffusion under oxidizing conditions in epitaxial SiGe heterostructures with high compressive stress. Applied Physics Letters, 96 (12). 122107pp. doi:10.1063/1.3313949
Xia, Guangrui, Olubuyide, Oluwamuyiwa O., Hoyt, Judy L., Canonico, Michael (2006) Strain dependence of Si–Ge interdiffusion in epitaxial Si∕Si1−yGey∕Si heterostructures on relaxed Si1−xGex substrates. Applied Physics Letters, 88 (1). 13507pp. doi:10.1063/1.2158706
Zhu, Ying, Zhang, Yiwen, Li, Bowen, Xia, Guangrui (Maggie), Wen, Rui-Tao (2024) Evolution of GeSi islands in epitaxial Ge-on-Si during annealing. Applied Surface Science, 659. 159901 doi:10.1016/j.apsusc.2024.159901
Lin, Yiheng, Yasuda, Hiroshi, Schiekofer, Manfred, Benna, Bernhard, Wise, Rick, Xia, Guangrui (Maggie) (2014) Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms. Journal of Applied Physics, 116 (14). 144904pp. doi:10.1063/1.4897498
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