Chinone, N., Nakamura, T., Cho, Y. (2014) Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy. Journal of Applied Physics, 116 (8). 84509pp. doi:10.1063/1.4893959
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy | ||
| Journal | Journal of Applied Physics | ||
| Authors | Chinone, N. | Author | |
| Nakamura, T. | Author | ||
| Cho, Y. | Author | ||
| Year | 2014 (August 28) | Volume | 116 |
| Issue | 8 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.4893959Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5200352 | Long-form Identifier | mindat:1:5:5200352:3 |
| GUID | 0 | ||
| Full Reference | Chinone, N., Nakamura, T., Cho, Y. (2014) Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy. Journal of Applied Physics, 116 (8). 84509pp. doi:10.1063/1.4893959 | ||
| Plain Text | Chinone, N., Nakamura, T., Cho, Y. (2014) Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy. Journal of Applied Physics, 116 (8). 84509pp. doi:10.1063/1.4893959 | ||
| In | (2014, August) Journal of Applied Physics Vol. 116 (8) AIP Publishing | ||
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