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Vanacore, G. M., Nicotra, G., Zani, M., Bollani, M., Bonera, E., Montalenti, F., Capellini, G., Isella, G., Osmond, J., Picco, A., Boioli, F., Tagliaferri, A. (2015) Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source. Journal of Applied Physics, 117 (10). 104309pp. doi:10.1063/1.4914409

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Reference TypeJournal (article/letter/editorial)
TitleDelayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source
JournalJournal of Applied Physics
AuthorsVanacore, G. M.Author
Nicotra, G.Author
Zani, M.Author
Bollani, M.Author
Bonera, E.Author
Montalenti, F.Author
Capellini, G.Author
Isella, G.Author
Osmond, J.Author
Picco, A.Author
Boioli, F.Author
Tagliaferri, A.Author
Year2015 (March 14)Volume117
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.4914409Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200565Long-form Identifiermindat:1:5:5200565:5
GUID0
Full ReferenceVanacore, G. M., Nicotra, G., Zani, M., Bollani, M., Bonera, E., Montalenti, F., Capellini, G., Isella, G., Osmond, J., Picco, A., Boioli, F., Tagliaferri, A. (2015) Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source. Journal of Applied Physics, 117 (10). 104309pp. doi:10.1063/1.4914409
Plain TextVanacore, G. M., Nicotra, G., Zani, M., Bollani, M., Bonera, E., Montalenti, F., Capellini, G., Isella, G., Osmond, J., Picco, A., Boioli, F., Tagliaferri, A. (2015) Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source. Journal of Applied Physics, 117 (10). 104309pp. doi:10.1063/1.4914409
In(2015, March) Journal of Applied Physics Vol. 117 (10) AIP Publishing

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Vanacore, G. M., Chaigneau, M., Barrett, N., Bollani, M., Boioli, F., Salvalaglio, M., Montalenti, F., Manini, N., Caramella, L., Biagioni, P., Chrastina, D., Isella, G., Renault, O., Zani, M., Sordan, R., Onida, G., Ossikovski, R., Drouhin, H.-J., Tagliaferri, A. (2013) Hydrostatic strain enhancement in laterally confined SiGe nanostripes. Physical Review B, 88 (11) doi:10.1103/physrevb.88.115309
Vanacore, G. M., Zani, M., Isella, G., Osmond, J., Bollani, M., Tagliaferri, A. (2010) Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100) Physical Review B, 82 (12) doi:10.1103/physrevb.82.125456
Boioli, F., Gatti, R., Grydlik, M., Brehm, M., Montalenti, F., Miglio, Leo (2011) Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates. Applied Physics Letters, 99 (3). 33106pp. doi:10.1063/1.3615285
Pezzoli, F., Bonera, E., Bollani, M., Sanguinetti, S., Grilli, E., Guzzi, M., Isella, G., Chrastina, D., von Känel, H. (2009) Raman Spectroscopy for the Analysis οf Temperature-Dependent Plastic Relaxation οf SiGe Layers. Acta Physica Polonica A, 116 (1). 78-80 doi:10.12693/aphyspola.116.78
Capellini, G., De Seta, M., Busby, Y., Pea, M., Evangelisti, F., Nicotra, G., Spinella, C., Nardone, M., Ferrari, C. (2010) Strain relaxation in high Ge content SiGe layers deposited on Si. Journal of Applied Physics, 107 (6). 63504pp. doi:10.1063/1.3327435
Bonera, E., Bollani, M., Chrastina, D., Pezzoli, F., Picco, A., Schmidt, O. G., Terziotti, D. (2013) Substrate strain manipulation by nanostructure perimeter forces. Journal of Applied Physics, 113 (16). 164308pp. doi:10.1063/1.4802686
Picco, A., Bonera, E., Grilli, E., Guzzi, M., Giarola, M., Mariotto, G., Chrastina, D., Isella, G. (2010) Raman efficiency in SiGe alloys. Physical Review B, 82 (11) doi:10.1103/physrevb.82.115317
Martinelli, Lucio, Marzegalli, A., Raiteri, P., Bollani, M., Montalenti, F., Miglio, Leo, Chrastina, D., Isella, G., von Känel, H. (2004) Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data. Applied Physics Letters, 84 (15). 2895-2897 doi:10.1063/1.1705727
Capellini, G., De Seta, M., Evangelisti, F. (2001) SiGe intermixing in Ge/Si(100) islands. Applied Physics Letters, 78 (3). 303-305 doi:10.1063/1.1339263
Boioli, F., Zinovyev, V. A., Gatti, R., Marzegalli, A., Montalenti, F., Stoffel, M., Merdzhanova, T., Wang, L., Pezzoli, F., Rastelli, A., Schmidt, O. G., Miglio, Leo (2011) Self-Ordering of Misfit Dislocation Segments in Epitaxial SiGe Islands on Si(001). Journal of Applied Physics, 110 (4). 44310pp. doi:10.1063/1.3611385
Bonera, E., Pezzoli, F., Picco, A., Vastola, G., Stoffel, M., Grilli, E., Guzzi, M., Rastelli, A., Schmidt, O. G., Miglio, L. (2009) Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations. Physical Review B, 79 (7) doi:10.1103/physrevb.79.075321
 
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