Suvanam, S. S., Gulbinas, K., Usman, M., Linnarson, M. K., Martin, D. M., Linnros, J., Grivickas, V., Hallén, A. (2015) 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption. Journal of Applied Physics, 117 (10). 105309pp. doi:10.1063/1.4914521
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption | ||
| Journal | Journal of Applied Physics | ||
| Authors | Suvanam, S. S. | Author | |
| Gulbinas, K. | Author | ||
| Usman, M. | Author | ||
| Linnarson, M. K. | Author | ||
| Martin, D. M. | Author | ||
| Linnros, J. | Author | ||
| Grivickas, V. | Author | ||
| Hallén, A. | Author | ||
| Year | 2015 (March 14) | Volume | 117 |
| Issue | 10 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.4914521Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5200587 | Long-form Identifier | mindat:1:5:5200587:7 |
| GUID | 0 | ||
| Full Reference | Suvanam, S. S., Gulbinas, K., Usman, M., Linnarson, M. K., Martin, D. M., Linnros, J., Grivickas, V., Hallén, A. (2015) 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption. Journal of Applied Physics, 117 (10). 105309pp. doi:10.1063/1.4914521 | ||
| Plain Text | Suvanam, S. S., Gulbinas, K., Usman, M., Linnarson, M. K., Martin, D. M., Linnros, J., Grivickas, V., Hallén, A. (2015) 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption. Journal of Applied Physics, 117 (10). 105309pp. doi:10.1063/1.4914521 | ||
| In | (2015, March) Journal of Applied Physics Vol. 117 (10) AIP Publishing | ||
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