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Fireman, Micha N., Browne, David A., Mishra, Umesh K., Speck, James S. (2016) Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy. Journal of Applied Physics, 119 (5). 55709pp. doi:10.1063/1.4941323

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Reference TypeJournal (article/letter/editorial)
TitleIsotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsFireman, Micha N.Author
Browne, David A.Author
Mishra, Umesh K.Author
Speck, James S.Author
Year2016 (February 7)Volume119
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.4941323Search in ResearchGate
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Mindat Ref. ID5204854Long-form Identifiermindat:1:5:5204854:4
GUID0
Full ReferenceFireman, Micha N., Browne, David A., Mishra, Umesh K., Speck, James S. (2016) Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy. Journal of Applied Physics, 119 (5). 55709pp. doi:10.1063/1.4941323
Plain TextFireman, Micha N., Browne, David A., Mishra, Umesh K., Speck, James S. (2016) Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy. Journal of Applied Physics, 119 (5). 55709pp. doi:10.1063/1.4941323
In(2016, February) Journal of Applied Physics Vol. 119 (5) AIP Publishing

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Fireman, Micha N., Browne, David A., Mazumder, Baishakhi, Speck, James S., Mishra, Umesh K. (2015) Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy. Applied Physics Letters, 106 (20). 202106pp. doi:10.1063/1.4921633
Fireman, M. N., Li, Haoran, Keller, Stacia, Mishra, Umesh K., Speck, James S. (2017) Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy. Journal of Applied Physics, 121 (20). 205702pp. doi:10.1063/1.4983767
Fireman, M.N., Li, Haoran, Keller, Stacia, Mishra, Umesh K., Speck, James S. (2018) Growth of N-polar GaN by ammonia molecular beam epitaxy. Journal of Crystal Growth, 481. 65-70 doi:10.1016/j.jcrysgro.2017.10.033
Fireman, Micha N., Bonef, Bastien, Young, Erin C., Nookala, Nishant, Belkin, Mikhail A., Speck, James S. (2017) Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy. Journal of Applied Physics, 122 (7). 75105pp. doi:10.1063/1.4991417
Wong, Man Hoi, Wu, Feng, Mates, Thomas E., Speck, James S., Mishra, Umesh K. (2008) Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 104 (9). 93710pp. doi:10.1063/1.3009669
Fireman, Micha N., L'Heureux, Guillaume, Wu, Feng, Mates, Tom, Young, Erin C., Speck, James S. (2019) High germanium doping of GaN films by ammonia molecular beam epitaxy. Journal of Crystal Growth, 508. 19-23 doi:10.1016/j.jcrysgro.2018.12.009
Browne, David A., Mazumder, Baishakhi, Wu, Yuh-Renn, Speck, James S. (2015) Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy. Journal of Applied Physics, 117 (18). 185703pp. doi:10.1063/1.4919750
Raman, Ajay, Hurni, Christophe A., Speck, James S., Mishra, Umesh K. (2012) AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy. physica status solidi (a), 209 (1). 216-220 doi:10.1002/pssa.201127169
Hurni, Christophe A., Bierwagen, Oliver, Lang, Jordan R., McSkimming, Brian M., Gallinat, Chad S., Young, Erin C., Browne, David A., Mishra, Umesh K., Speck, James S. (2010) p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents. Applied Physics Letters, 97 (22). 222113pp. doi:10.1063/1.3521388
Hoi Wong, Man, Wu, Feng, Hurni, Christophe A., Choi, Soojeong, Speck, James S., Mishra, Umesh K. (2012) Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source. Applied Physics Letters, 100 (7). 72107pp. doi:10.1063/1.3686922
Wong, Man Hoi, Pei, Yi, Speck, James S., Mishra, Umesh K. (2009) High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation. Applied Physics Letters, 94 (18). 182103pp. doi:10.1063/1.3130228
 
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