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Hurni, Christophe A., Bierwagen, Oliver, Lang, Jordan R., McSkimming, Brian M., Gallinat, Chad S., Young, Erin C., Browne, David A., Mishra, Umesh K., Speck, James S. (2010) p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents. Applied Physics Letters, 97 (22). 222113pp. doi:10.1063/1.3521388

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Reference TypeJournal (article/letter/editorial)
Titlep-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
JournalApplied Physics Letters
AuthorsHurni, Christophe A.Author
Bierwagen, OliverAuthor
Lang, Jordan R.Author
McSkimming, Brian M.Author
Gallinat, Chad S.Author
Young, Erin C.Author
Browne, David A.Author
Mishra, Umesh K.Author
Speck, James S.Author
Year2010 (November 29)Volume97
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.3521388Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8588625Long-form Identifiermindat:1:5:8588625:2
GUID0
Full ReferenceHurni, Christophe A., Bierwagen, Oliver, Lang, Jordan R., McSkimming, Brian M., Gallinat, Chad S., Young, Erin C., Browne, David A., Mishra, Umesh K., Speck, James S. (2010) p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents. Applied Physics Letters, 97 (22). 222113pp. doi:10.1063/1.3521388
Plain TextHurni, Christophe A., Bierwagen, Oliver, Lang, Jordan R., McSkimming, Brian M., Gallinat, Chad S., Young, Erin C., Browne, David A., Mishra, Umesh K., Speck, James S. (2010) p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents. Applied Physics Letters, 97 (22). 222113pp. doi:10.1063/1.3521388
In(2010, November) Applied Physics Letters Vol. 97 (22) AIP Publishing

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