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Powell, D. M., Markevich, V. P., Hofstetter, J., Jensen, M. A., Morishige, A. E., Castellanos, S., Lai, B., Peaker, A. R., Buonassisi, T. (2016) Exceptional gettering response of epitaxially grown kerfless silicon. Journal of Applied Physics, 119 (6). 65101pp. doi:10.1063/1.4940947

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Reference TypeJournal (article/letter/editorial)
TitleExceptional gettering response of epitaxially grown kerfless silicon
JournalJournal of Applied Physics
AuthorsPowell, D. M.Author
Markevich, V. P.Author
Hofstetter, J.Author
Jensen, M. A.Author
Morishige, A. E.Author
Castellanos, S.Author
Lai, B.Author
Peaker, A. R.Author
Buonassisi, T.Author
Year2016 (February 14)Volume119
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4940947Search in ResearchGate
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Mindat Ref. ID5204865Long-form Identifiermindat:1:5:5204865:0
GUID0
Full ReferencePowell, D. M., Markevich, V. P., Hofstetter, J., Jensen, M. A., Morishige, A. E., Castellanos, S., Lai, B., Peaker, A. R., Buonassisi, T. (2016) Exceptional gettering response of epitaxially grown kerfless silicon. Journal of Applied Physics, 119 (6). 65101pp. doi:10.1063/1.4940947
Plain TextPowell, D. M., Markevich, V. P., Hofstetter, J., Jensen, M. A., Morishige, A. E., Castellanos, S., Lai, B., Peaker, A. R., Buonassisi, T. (2016) Exceptional gettering response of epitaxially grown kerfless silicon. Journal of Applied Physics, 119 (6). 65101pp. doi:10.1063/1.4940947
In(2016, February) Journal of Applied Physics Vol. 119 (6) AIP Publishing

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Powell, D. M., Hofstetter, J., Fenning, D. P., Hao, R., Ravi, T. S., Buonassisi, T. (2013) Effective lifetimes exceeding 300μs in getteredp-type epitaxial kerfless silicon for photovoltaics. Applied Physics Letters, 103 (26). 263902pp. doi:10.1063/1.4844915
Fenning, D. P., Hofstetter, J., Bertoni, M. I., Coletti, G., Lai, B., del Cañizo, C., Buonassisi, T. (2013) Precipitated iron: A limit on gettering efficacy in multicrystalline silicon. Journal of Applied Physics, 113 (4). 44521pp. doi:10.1063/1.4788800
Morishige, Ashley E., Jensen, Mallory A., Hofstetter, Jasmin, Yen, Patricia X. T., Wang, Chenlei, Lai, Barry, Fenning, David P., Buonassisi, Tonio (2016) Synchrotron-based investigation of transition-metal getterability in n-type multicrystalline silicon. Applied Physics Letters, 108 (20). 202104pp. doi:10.1063/1.4950765
Kivambe, Maulid M., Powell, Douglas M., Castellanos, Sergio, Jensen, Mallory Ann, Morishige, Ashley E., Lai, Barry, Hao, Ruiying, Ravi, T.S., Buonassisi, Tonio (2018) Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime. Journal of Crystal Growth, 483. 57-64 doi:10.1016/j.jcrysgro.2017.11.016
Liu, A. Y., Sun, C., Markevich, V. P., Peaker, A. R., Murphy, J. D., Macdonald, D. (2016) Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films. Journal of Applied Physics, 120 (19). 193103pp. doi:10.1063/1.4967914
Castellanos, S., Kivambe, M., Hofstetter, J., Rinio, M., Lai, B., Buonassisi, T. (2014) Variation of dislocation etch-pit geometry: An indicator of bulk microstructure and recombination activity in multicrystalline silicon. Journal of Applied Physics, 115 (18). 183511pp. doi:10.1063/1.4876445
Fenning, D. P., Zuschlag, A. S., Bertoni, M. I., Lai, B., Hahn, G., Buonassisi, T. (2013) Improved iron gettering of contaminated multicrystalline silicon by high-temperature phosphorus diffusion. Journal of Applied Physics, 113 (21). 214504pp. doi:10.1063/1.4808310
Jensen, Mallory Ann, Hofstetter, Jasmin, Morishige, Ashley E., Coletti, Gianluca, Lai, Barry, Fenning, David P., Buonassisi, Tonio (2015) Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells. Applied Physics Letters, 106 (20). 202104pp. doi:10.1063/1.4921619
Markevich, V. P., Peaker, A. R., Hamilton, B., Litvinov, V. V., Pokotilo, Yu. M., Lastovskii, S. B., Coutinho, J., Carvalho, A., Rayson, M. J., Briddon, P. R. (2011) Tin-vacancy complex in germanium. Journal of Applied Physics, 109 (8). 83705pp. doi:10.1063/1.3574405
Leonard, S., Markevich, V. P., Peaker, A. R., Hamilton, B., Murphy, J. D. (2015) Evidence for an iron-hydrogen complex in p-type silicon. Applied Physics Letters, 107 (3). 32103pp. doi:10.1063/1.4927323
Leonard, S., Markevich, V. P., Peaker, A. R., Hamilton, B. (2013) Passivation of titanium by hydrogen in silicon. Applied Physics Letters, 103 (13). 132103pp. doi:10.1063/1.4822329
 
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