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Yamada, Takahiro, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2016) Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry. Journal of Applied Physics, 119 (6). 63301pp. doi:10.1063/1.4941821

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry
JournalJournal of Applied Physics
AuthorsYamada, TakahiroAuthor
Ohmi, HiromasaAuthor
Kakiuchi, HiroakiAuthor
Yasutake, KiyoshiAuthor
Year2016 (February 14)Volume119
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4941821Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5204906Long-form Identifiermindat:1:5:5204906:6
GUID0
Full ReferenceYamada, Takahiro, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2016) Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry. Journal of Applied Physics, 119 (6). 63301pp. doi:10.1063/1.4941821
Plain TextYamada, Takahiro, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2016) Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry. Journal of Applied Physics, 119 (6). 63301pp. doi:10.1063/1.4941821
In(2016, February) Journal of Applied Physics Vol. 119 (6) AIP Publishing

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Yamada, Takahiro, Ohmi, Hiromasa, Okamoto, Kohei, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2012) Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma. Japanese Journal of Applied Physics, 51. 10 doi:10.1143/jjap.51.10na09
Yamada, Takahiro, Ohmi, Hiromasa, Okamoto, Kohei, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2012) Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma. Japanese Journal of Applied Physics, 51 (10) 10 doi:10.7567/jjap.51.10na09
Ohmi, Hiromasa, Funaki, Takeshi, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2016) Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma. Journal of Physics D: Applied Physics, 49. 35202pp. doi:10.1088/0022-3727/49/3/035202
Shuto, Mitsutoshi, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yamada, Takahiro, Yasutake, Kiyoshi (2017) Determination of plasma impedance of microwave plasma system by electric field simulation. Journal of Applied Physics, 122 (4). 43303pp. doi:10.1063/1.4993902
Ohmi, Hiromasa, Yamada, Takahiro, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2011) Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen-Plasma-Induced Chemical Transport. Japanese Journal of Applied Physics, 50 (8) 8 doi:10.1143/jjap.50.08jd01
Ohmi, Hiromasa, Yamada, Takahiro, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2011) Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen-Plasma-Induced Chemical Transport. Japanese Journal of Applied Physics, 50 (8) 8 doi:10.7567/jjap.50.08jd01
Yoshida, Kazushi, Ohmi, Hiromasa, Yasutake, Kiyoshi, Kakiuchi, Hiroaki (2021) Formation of indium nitride nanostructures by atmospheric pressure plasma nitridation of molten indium. Journal of Applied Physics, 130 (6) 63301pp. doi:10.1063/5.0055532
Takei, Norihisa, Shinoda, Fumiya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi, Ohmi, Hiromasa (2018) On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap. Journal of Physics D: Applied Physics, 51. 245203pp. doi:10.1088/1361-6463/aac2ae
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Hamaoka, Yoshinori, Yasutake, Kiyoshi (2007) Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma. Journal of Applied Physics, 102 (2). 23302pp. doi:10.1063/1.2753675
Ohmi, Hiromasa, Sato, Jumpei, Hirano, Tatsuya, Kubota, Yusuke, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2016) Copper dry etching by sub-atmospheric-pressure pure hydrogen glow plasma. Applied Physics Letters, 109 (21). 211603pp. doi:10.1063/1.4967382
Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi (2015) Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma. Journal of Applied Physics, 118 (4). 45301pp. doi:10.1063/1.4926849
 
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