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Tokuda, Y., Kamata, I., Miyazawa, T., Hoshino, N., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H. (2018) Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing. Journal of Applied Physics, 124 (2). 25705pp. doi:10.1063/1.5031896

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Reference TypeJournal (article/letter/editorial)
TitleGlide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing
JournalJournal of Applied Physics
AuthorsTokuda, Y.Author
Kamata, I.Author
Miyazawa, T.Author
Hoshino, N.Author
Kato, T.Author
Okumura, H.Author
Kimoto, T.Author
Tsuchida, H.Author
Year2018 (July 14)Volume124
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.5031896Search in ResearchGate
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Mindat Ref. ID5210134Long-form Identifiermindat:1:5:5210134:8
GUID0
Full ReferenceTokuda, Y., Kamata, I., Miyazawa, T., Hoshino, N., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H. (2018) Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing. Journal of Applied Physics, 124 (2). 25705pp. doi:10.1063/1.5031896
Plain TextTokuda, Y., Kamata, I., Miyazawa, T., Hoshino, N., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H. (2018) Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing. Journal of Applied Physics, 124 (2). 25705pp. doi:10.1063/1.5031896
In(2018, July) Journal of Applied Physics Vol. 124 (2) AIP Publishing

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Tokuda, Y., Yamashita, T., Kamata, I., Naijo, T., Miyazawa, T., Hayashi, S., Hoshino, N., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H. (2017) Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing. Journal of Applied Physics, 122 (4). 45707pp. doi:10.1063/1.4996098
Tokuda, Y., Kamata, I., Hoshino, N., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H. (2017) Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique. Journal of Crystal Growth, 468. 889-893 doi:10.1016/j.jcrysgro.2017.01.004
Tokuda, Yuichiro, Kamata, Isaho, Hoshino, Norihiro, Tsuchida, Hidekazu (2019) Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC. Japanese Journal of Applied Physics, 58 (12) 121005 doi:10.7567/1347-4065/ab4fac
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