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Sun, Yunong, Yang, Chao, Yin, Zhipeng, Qin, Fuwen, Wang, Dejun (2019) Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors. Journal of Applied Physics, 125 (18). 185703pp. doi:10.1063/1.5084759

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Reference TypeJournal (article/letter/editorial)
TitlePlasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors
JournalJournal of Applied Physics
AuthorsSun, YunongAuthor
Yang, ChaoAuthor
Yin, ZhipengAuthor
Qin, FuwenAuthor
Wang, DejunAuthor
Year2019 (May 14)Volume125
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.5084759Search in ResearchGate
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Mindat Ref. ID5211034Long-form Identifiermindat:1:5:5211034:6
GUID0
Full ReferenceSun, Yunong, Yang, Chao, Yin, Zhipeng, Qin, Fuwen, Wang, Dejun (2019) Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors. Journal of Applied Physics, 125 (18). 185703pp. doi:10.1063/1.5084759
Plain TextSun, Yunong, Yang, Chao, Yin, Zhipeng, Qin, Fuwen, Wang, Dejun (2019) Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors. Journal of Applied Physics, 125 (18). 185703pp. doi:10.1063/1.5084759
In(2019, May) Journal of Applied Physics Vol. 125 (18) AIP Publishing

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Yin, Zhipeng, Yang, Chao, Zhang, Fanglong, Su, Yan, Qin, Fuwen, Wang, Dejun (2020) Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors. Applied Surface Science, 531. 147312pp. doi:10.1016/j.apsusc.2020.147312
Yang, Chao, Gu, Zhenghao, Yin, Zhipeng, Qin, Fuwen, Wang, Dejun (2019) Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress. Journal of Physics D: Applied Physics, 52. 405103pp. doi:10.1088/1361-6463/ab2faf
Yang, Chao, Yin, Zhipeng, Zhang, Fanglong, Su, Yan, Qin, Fuwen, Wang, Dejun (2020) Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors. Applied Surface Science, 513. 145837pp. doi:10.1016/j.apsusc.2020.145837
Yang, Chao, Zhang, Fanglong, Yin, Zhipeng, Su, Yan, Qin, Fuwen, Wang, Dejun (2019) Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors. Applied Surface Science, 488. 293-302 doi:10.1016/j.apsusc.2019.05.241
Wei, Shengsheng, Bai, Jiao, Xie, Weiwei, Su, Yan, Qin, Fuwen, Wang, Dejun (2023) Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces. ACS Applied Materials & Interfaces, 15 (14) 18537-18549 doi:10.1021/acsami.3c00995
Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun (2014) Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma. Applied Physics Letters, 104 (20). 202101pp. doi:10.1063/1.4878661
Liu, Bingbing, Qin, Fuwen, Wang, Dejun (2016) Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing. Applied Surface Science, 364. 769-774 doi:10.1016/j.apsusc.2015.12.226
Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun (2014) Publisher's Note: “Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma” [Appl. Phys. Lett. 104, 202101 (2014)]. Applied Physics Letters, 104 (26). 269902pp. doi:10.1063/1.4886975
Yin, Zhipeng, Wei, Shengsheng, Bai, Jiao, Xie, Weiwei, Qin, Fuwen, Wang, Dejun (2022) SiC/SiO2 interface properties formed by low-temperature ozone re-oxidation annealing. Ceramics International, 48 (8) 10874-10884 doi:10.1016/j.ceramint.2021.12.304
Zhu, Qiaozhi, Qin, Fuwen, Li, Wenbo, Wang, Dejun (2013) Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing. Applied Physics Letters, 103 (6). 62105pp. doi:10.1063/1.4818141
Zhu, Qiaozhi, Qin, Fuwen, Li, Wenbo, Wang, Dejun (2014) Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing. Physica B: Condensed Matter, 432. 89-95 doi:10.1016/j.physb.2013.09.043
 
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