Vote for your favorite mineral in #MinCup25! - Pollucite vs. Tugtupite
It's the cesium #pollucite against the optical changeling #tugtupite for this match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Zhang, L.Q., Zhang, C.H., Xu, C.L., Li, J.J., Yang, Y.T., Ma, Y.Z., Li, J.Y., Liu, H.P., Ding, Z.N., Yan, T.X., Song, Y. (2017) Influence of highly-charged 209 Bi 33+ irradiation on structure and optoelectric characteristics of GaN epilayer. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406. 571-577 doi:10.1016/j.nimb.2017.04.056

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleInfluence of highly-charged 209 Bi 33+ irradiation on structure and optoelectric characteristics of GaN epilayer
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsZhang, L.Q.Author
Zhang, C.H.Author
Xu, C.L.Author
Li, J.J.Author
Yang, Y.T.Author
Ma, Y.Z.Author
Li, J.Y.Author
Liu, H.P.Author
Ding, Z.N.Author
Yan, T.X.Author
Song, Y.Author
Year2017 (September)Volume406
PublisherElsevier BV
DOIdoi:10.1016/j.nimb.2017.04.056Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5654751Long-form Identifiermindat:1:5:5654751:1
GUID0
Full ReferenceZhang, L.Q., Zhang, C.H., Xu, C.L., Li, J.J., Yang, Y.T., Ma, Y.Z., Li, J.Y., Liu, H.P., Ding, Z.N., Yan, T.X., Song, Y. (2017) Influence of highly-charged 209 Bi 33+ irradiation on structure and optoelectric characteristics of GaN epilayer. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406. 571-577 doi:10.1016/j.nimb.2017.04.056
Plain TextZhang, L.Q., Zhang, C.H., Xu, C.L., Li, J.J., Yang, Y.T., Ma, Y.Z., Li, J.Y., Liu, H.P., Ding, Z.N., Yan, T.X., Song, Y. (2017) Influence of highly-charged 209 Bi 33+ irradiation on structure and optoelectric characteristics of GaN epilayer. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406. 571-577 doi:10.1016/j.nimb.2017.04.056
In(2017) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 406. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Xu, C.L., Zhang, C.H., Li, J.J., Zhang, L.Q., Yang, Y.T., Song, Y., Jia, X.J., Li, J.Y., Chen, K.Q. (2012) A HRXRD and nano-indentation study on Ne-implanted 6H–SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 286. 129-133 doi:10.1016/j.nimb.2012.01.009
Zhang, L.Q., Chen, Y.G., Liu, H.P., Kang, L., Zhang, T.M., Li, J.Y., Xu, C.L., Zhang, X.L., Li, J.Y., Ding, Z.N., Zhang, C.H. (2020) An investigation on structures and strains of gas-ion-implanted and post-implantation-annealed SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 474. 15-22 doi:10.1016/j.nimb.2020.04.018
Zhang, L.Q., Zhang, C.H., Xian, Y.Q., Liu, J., Ding, Z.N., Yan, T.X., Chen, Y.G., Su, C.H., Li, J.Y., Liu, H.P. (2018) Degradation mechanisms of optoelectric properties of GaN via highly-charged 209Bi33+ ions irradiation. Applied Surface Science, 440. 814-820 doi:10.1016/j.apsusc.2018.01.170
Gou, J., Zhang, L.Q., Zhang, C.H., Song, Y., Yang, Y.T., Li, J.J., Meng, Y.C., Li, H.X. (2013) Effects of irradiation of 290MeV U-ions in GaN epi-layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 307. 89-92 doi:10.1016/j.nimb.2013.01.086
Zhang, L.Q., Zhang, C.H., Jia, X.J., Gou, J., Yang, Y.T., Song, Y., Xu, C.L., Meng, Y.C., Li, J.Y., Jin, Y.F. (2013) Structures and optical properties of Kr23+ and Ne8+-irradiated GaN epi-layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 307. 60-64 doi:10.1016/j.nimb.2012.12.101
Zhang, L.Q., Zhang, C.H., Han, L.H., Xu, C.L., Li, J.J., Yang, Y.T., Song, Y., Gou, J., Li, J.Y., Ma, Y.Z. (2014) Surface damage on 6H–SiC by highly-charged Xe q+ ions irradiation. Journal of Nuclear Materials, 455 (1). 704-709 doi:10.1016/j.jnucmat.2014.08.001
Gou, J., Zhang, C.H., Zhang, L.Q., Song, Y., Wang, L.X., Li, J.J., Meng, Y.C., Li, H.X., Yang, Y.T., Lu, Z.W. (2014) The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 339. 20-25 doi:10.1016/j.nimb.2014.08.014
Zhang, L.M., Zhang, C.H., Zhang, L.Q., Jia, X.J., Ma, T.D., Song, Y., Yang, Y.T., Li, B.S., Jin, Y.F. (2011) Structural and optical study of irradiation effect in GaN epilayers induced by 308MeV Xe ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269 (15). 1782-1785 doi:10.1016/j.nimb.2011.04.118
Zhang, L.Q., Zhang, C.H., Yang, Y.T., Han, L.H., Li, B.S., Song, S.J., Sun, Y.M., Jin, Y.F. (2011) Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269 (3). 396-399 doi:10.1016/j.nimb.2010.11.043
Li, J.J., Zhang, C.H., Xu, C.L., Jia, X.J., Song, Y., Li, J.Y., Jin, Y.F. (2012) Lattice damage and nanohardness in 6H–SiC implanted with multiple-energy Xe ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 286. 124-128 doi:10.1016/j.nimb.2011.11.034
Li, B.S., Zhang, C.H., Zhang, H.H., Zhang, Y., Yang, Y.T., Zhang, L.Q. (2011) Precipitates and defects in silicon co-implanted with helium and oxygen. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269 (8). 739-744 doi:10.1016/j.nimb.2011.02.005
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 8, 2025 11:56:00
Go to top of page