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Jing-Bo, Xu, Hai-Ying, Zhang, Xiao-Jun, Fu, Tian-Yi, Guo, Jie, Huang (2010) Device research on GaAs-based InA1As/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition. Chinese Physics B, 19. 37302pp. doi:10.1088/1674-1056/19/3/037302

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Reference TypeJournal (article/letter/editorial)
TitleDevice research on GaAs-based InA1As/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition
JournalChinese Physics B
AuthorsJing-Bo, XuAuthor
Hai-Ying, ZhangAuthor
Xiao-Jun, FuAuthor
Tian-Yi, GuoAuthor
Jie, HuangAuthor
Year2010 (March)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/3/037302Search in ResearchGate
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Mindat Ref. ID6000150Long-form Identifiermindat:1:5:6000150:2
GUID0
Full ReferenceJing-Bo, Xu, Hai-Ying, Zhang, Xiao-Jun, Fu, Tian-Yi, Guo, Jie, Huang (2010) Device research on GaAs-based InA1As/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition. Chinese Physics B, 19. 37302pp. doi:10.1088/1674-1056/19/3/037302
Plain TextJing-Bo, Xu, Hai-Ying, Zhang, Xiao-Jun, Fu, Tian-Yi, Guo, Jie, Huang (2010) Device research on GaAs-based InA1As/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition. Chinese Physics B, 19. 37302pp. doi:10.1088/1674-1056/19/3/037302
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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