| Reference Type | Journal (article/letter/editorial) |
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| Title | SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes |
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| Journal | Chinese Physics B |
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| Authors | Yue-Hu, Wang | Author |
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| Yi-Men, Zhang | Author |
| Yu-Ming, Zhang | Author |
| Lin, Zhang | Author |
| Ren-Xu, Jia | Author |
| Da, Chen | Author |
| Year | 2010 (March) | Volume | 19 |
|---|
| Publisher | IOP Publishing |
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| DOI | doi:10.1088/1674-1056/19/3/036803Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6000136 | Long-form Identifier | mindat:1:5:6000136:2 |
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|
| GUID | 0 |
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| Full Reference | Yue-Hu, Wang, Yi-Men, Zhang, Yu-Ming, Zhang, Lin, Zhang, Ren-Xu, Jia, Da, Chen (2010) SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes. Chinese Physics B, 19. 36803pp. doi:10.1088/1674-1056/19/3/036803 |
|---|
| Plain Text | Yue-Hu, Wang, Yi-Men, Zhang, Yu-Ming, Zhang, Lin, Zhang, Ren-Xu, Jia, Da, Chen (2010) SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes. Chinese Physics B, 19. 36803pp. doi:10.1088/1674-1056/19/3/036803 |
|---|
| In | (n.d.) Chinese Physics B Vol. 19. IOP Publishing |
|---|
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