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Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2011) Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode. Chinese Physics B, 20. 117301pp. doi:10.1088/1674-1056/20/11/117301

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Reference TypeJournal (article/letter/editorial)
TitleEdge termination study and fabrication of a 4H-SiC junction barrier Schottky diode
JournalChinese Physics B
AuthorsChen, Feng-PingAuthor
Zhang, Yu-MingAuthor
Zhang, Yi-MenAuthor
Tang, Xiao-YanAuthor
Wang, Yue-HuAuthor
Chen, Wen-HaoAuthor
Year2011 (November)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/11/117301Search in ResearchGate
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Mindat Ref. ID6001004Long-form Identifiermindat:1:5:6001004:1
GUID0
Full ReferenceChen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2011) Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode. Chinese Physics B, 20. 117301pp. doi:10.1088/1674-1056/20/11/117301
Plain TextChen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2011) Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode. Chinese Physics B, 20. 117301pp. doi:10.1088/1674-1056/20/11/117301
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2012) Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes. Chinese Physics B, 21. 37304pp. doi:10.1088/1674-1056/21/3/037304
Huang, Jian-Hua, Lü, Hong-Liang, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Chen, Feng-Ping, Song, Qing-Wen (2011) Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode. Chinese Physics B, 20. 118401pp. doi:10.1088/1674-1056/20/11/118401
Song, Qing-Wen, Zhang, Yu-Ming, Zhang, Yi-Men, Chen, Feng-Ping, Tang, Xiao-Yan (2011) Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier. Chinese Physics B, 20. 57301pp. doi:10.1088/1674-1056/20/5/057301
Feng-Ping, Chen, Yu-Ming, Zhang, Hong-Liang, Lü, Yi-Men, Zhang, Jian-Hua, Huang (2010) Study of 4H-SiC junction barrier Schottky diode using field guard ring termination. Chinese Physics B, 19. 97107pp. doi:10.1088/1674-1056/19/9/097107
Wang, Yue-Hu, Zhang, Yi-Men, Zhang, Yu-Ming, Song, Qing-Wen, Jia, Ren-Xu (2011) Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights. Chinese Physics B, 20. 87305pp. doi:10.1088/1674-1056/20/8/087305
Yuan, Hao, Tang, Xiao-Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Song, Qing-Wen, Yang, Fei, Wu, Hao (2014) 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination. Chinese Physics B, 23. 57102pp. doi:10.1088/1674-1056/23/5/057102
Feng-Ping, Chen, Yu-Ming, Zhang, Yi-Men, Zhang, Hong-Liang, Lü, Qing-Wen, Song (2010) Simulation research on offset field-plate used as edge termination in 4H–SiC merged PiN-Schottky diodes. Chinese Physics B, 19. 47305pp. doi:10.1088/1674-1056/19/4/047305
Wang, Dang-Chao, Zhang, Yu-Ming, Zhang, Yi-Men, Lei, Tian-Min, Guo, Hui, Wang, Yue-Hu, Tang, Xiao-Yan, Wang, Hang (2011) Raman analysis of epitaxial graphene grown on 4H—SiC (0001) substrate under low pressure condition. Chinese Physics B, 20. 128101pp. doi:10.1088/1674-1056/20/12/128101
Zhang, Qian, Zhang, Yu-Ming, Yuan, Lei, Zhang, Yi-Men, Tang, Xiao-Yan, Song, Qing-Wen (2012) Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer. Chinese Physics B, 21. 88502pp. doi:10.1088/1674-1056/21/8/088502
Yue-Hu, Wang, Yi-Men, Zhang, Yu-Ming, Zhang, Lin, Zhang, Ren-Xu, Jia, Da, Chen (2010) SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes. Chinese Physics B, 19. 36803pp. doi:10.1088/1674-1056/19/3/036803
Shou-Guo, Wang, Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Characterization of ion-implanted 4H-SiC Schottky barrier diodes. Chinese Physics B, 19. 17203-5 doi:10.1088/1674-1056/19/1/017203
 
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