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Feng-Ping, Chen, Yu-Ming, Zhang, Hong-Liang, Lü, Yi-Men, Zhang, Jian-Hua, Huang (2010) Study of 4H-SiC junction barrier Schottky diode using field guard ring termination. Chinese Physics B, 19. 97107pp. doi:10.1088/1674-1056/19/9/097107

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Reference TypeJournal (article/letter/editorial)
TitleStudy of 4H-SiC junction barrier Schottky diode using field guard ring termination
JournalChinese Physics B
AuthorsFeng-Ping, ChenAuthor
Yu-Ming, ZhangAuthor
Hong-Liang, LüAuthor
Yi-Men, ZhangAuthor
Jian-Hua, HuangAuthor
Year2010 (September)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/9/097107Search in ResearchGate
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Mindat Ref. ID6000711Long-form Identifiermindat:1:5:6000711:7
GUID0
Full ReferenceFeng-Ping, Chen, Yu-Ming, Zhang, Hong-Liang, Lü, Yi-Men, Zhang, Jian-Hua, Huang (2010) Study of 4H-SiC junction barrier Schottky diode using field guard ring termination. Chinese Physics B, 19. 97107pp. doi:10.1088/1674-1056/19/9/097107
Plain TextFeng-Ping, Chen, Yu-Ming, Zhang, Hong-Liang, Lü, Yi-Men, Zhang, Jian-Hua, Huang (2010) Study of 4H-SiC junction barrier Schottky diode using field guard ring termination. Chinese Physics B, 19. 97107pp. doi:10.1088/1674-1056/19/9/097107
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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Feng-Ping, Chen, Yu-Ming, Zhang, Yi-Men, Zhang, Hong-Liang, Lü, Qing-Wen, Song (2010) Simulation research on offset field-plate used as edge termination in 4H–SiC merged PiN-Schottky diodes. Chinese Physics B, 19. 47305pp. doi:10.1088/1674-1056/19/4/047305
Huang, Jian-Hua, Lü, Hong-Liang, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Chen, Feng-Ping, Song, Qing-Wen (2011) Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode. Chinese Physics B, 20. 118401pp. doi:10.1088/1674-1056/20/11/118401
Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2011) Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode. Chinese Physics B, 20. 117301pp. doi:10.1088/1674-1056/20/11/117301
Qing-Wen, Song, Yu-Ming, Zhang, Yi-Men, Zhang, Qian, Zhang, Hong-Liang, Lü (2010) Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region. Chinese Physics B, 19. 87202pp. doi:10.1088/1674-1056/19/8/087202
Shou-Guo, Wang, Yan, Zhang, Yi-Men, Zhang, Yu-Ming, Zhang (2010) Characterization of ion-implanted 4H-SiC Schottky barrier diodes. Chinese Physics B, 19. 17203-5 doi:10.1088/1674-1056/19/1/017203
Chen, Feng-Ping, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan, Wang, Yue-Hu, Chen, Wen-Hao (2012) Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes. Chinese Physics B, 21. 37304pp. doi:10.1088/1674-1056/21/3/037304
Qing-Wen, Song, Yu-Ming, Zhang, Yi-Men, Zhang, Hong-Liang, Lü, Feng-Ping, Chen, Qing-Li, Zheng (2009) Analytical model for reverse characteristics of 4H–SiC merged PN–Schottky (MPS) diodes. Chinese Physics B, 18. 5474-5478 doi:10.1088/1674-1056/18/12/057
Hong-Bin, Pu, Lin, Cao, Zhi-Ming, Chen, Jie, Ren, Ya-Gong, Nan (2010) Modeling of 4H—SiC multi-floating-junction Schottky barrier diode. Chinese Physics B, 19. 107101pp. doi:10.1088/1674-1056/19/10/107101
Ping, Cheng, Yu-Ming, Zhang, Yi-Men, Zhang, Hui, Guo (2010) Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC. Chinese Physics B, 19. 97802pp. doi:10.1088/1674-1056/19/9/097802
Xiao-Yan, Tang, Yu-Ming, Zhang, Yi-Men, Zhang (2010) Study of a 4H–SiC epitaxial n-channel MOSFET. Chinese Physics B, 19. 47204pp. doi:10.1088/1674-1056/19/4/047204
Song, Qing-Wen, Zhang, Yu-Ming, Zhang, Yi-Men, Chen, Feng-Ping, Tang, Xiao-Yan (2011) Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier. Chinese Physics B, 20. 57301pp. doi:10.1088/1674-1056/20/5/057301
 
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