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Chao, Ye, Zhao-Yuan, Ning (2010) Effect of F doping on capacitance–voltage characteristics of SiCOH low- k films metal–insulator–semiconductor structure. Chinese Physics B, 19. 57701pp. doi:10.1088/1674-1056/19/5/057701

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Reference TypeJournal (article/letter/editorial)
TitleEffect of F doping on capacitance–voltage characteristics of SiCOH low- k films metal–insulator–semiconductor structure
JournalChinese Physics B
AuthorsChao, YeAuthor
Zhao-Yuan, NingAuthor
Year2010 (May)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/5/057701Search in ResearchGate
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Mindat Ref. ID6000332Long-form Identifiermindat:1:5:6000332:4
GUID0
Full ReferenceChao, Ye, Zhao-Yuan, Ning (2010) Effect of F doping on capacitance–voltage characteristics of SiCOH low- k films metal–insulator–semiconductor structure. Chinese Physics B, 19. 57701pp. doi:10.1088/1674-1056/19/5/057701
Plain TextChao, Ye, Zhao-Yuan, Ning (2010) Effect of F doping on capacitance–voltage characteristics of SiCOH low- k films metal–insulator–semiconductor structure. Chinese Physics B, 19. 57701pp. doi:10.1088/1674-1056/19/5/057701
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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