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You-Run, Zhang, Bo, Zhang, Zhao-Ji, Li, Xiao-Chuan, Deng (2010) Two-dimensional analysis of the interface state effect on current gain for a 4H–SiC bipolar junction transistor. Chinese Physics B, 19. 67102pp. doi:10.1088/1674-1056/19/6/067102

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Reference TypeJournal (article/letter/editorial)
TitleTwo-dimensional analysis of the interface state effect on current gain for a 4H–SiC bipolar junction transistor
JournalChinese Physics B
AuthorsYou-Run, ZhangAuthor
Bo, ZhangAuthor
Zhao-Ji, LiAuthor
Xiao-Chuan, DengAuthor
Year2010 (June)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/6/067102Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6000413Long-form Identifiermindat:1:5:6000413:8
GUID0
Full ReferenceYou-Run, Zhang, Bo, Zhang, Zhao-Ji, Li, Xiao-Chuan, Deng (2010) Two-dimensional analysis of the interface state effect on current gain for a 4H–SiC bipolar junction transistor. Chinese Physics B, 19. 67102pp. doi:10.1088/1674-1056/19/6/067102
Plain TextYou-Run, Zhang, Bo, Zhang, Zhao-Ji, Li, Xiao-Chuan, Deng (2010) Two-dimensional analysis of the interface state effect on current gain for a 4H–SiC bipolar junction transistor. Chinese Physics B, 19. 67102pp. doi:10.1088/1674-1056/19/6/067102
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

See Also

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You-Run, Zhang, Bo, Zhang, Ze-Hong, Li, Chang-Jin, Lai, Zhao-Ji, Li (2009) Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device. Chinese Physics B, 18. 763-767 doi:10.1088/1674-1056/18/2/058
You-Run, Zhang, Bo, Zhang, Zhao-Ji, Li, Xiao-Chuan, Deng, Xi-Ling, Liu (2009) A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base. Chinese Physics B, 18. 3995-3999 doi:10.1088/1674-1056/18/9/063
Deng, Xiao-Chuan, Zhang, Bo, Zhang, You-Run, Wang, Yi, Li, Zhao-Ji (2011) Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer. Chinese Physics B, 20. 17304pp. doi:10.1088/1674-1056/20/1/017304
Zhang, Fa-Sheng, Li, Xin-Ran (2011) Research on high-voltage 4H—SiC P—i—N diode with planar edge junction termination techniques. Chinese Physics B, 20. 67102pp. doi:10.1088/1674-1056/20/6/067102
Deng, Yong-Hui, Xie, Gang, Wang, Tao, Sheng, Kuang (2013) A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain. Chinese Physics B, 22. 97201pp. doi:10.1088/1674-1056/22/9/097201
Yuan, Lei, Zhang, Yu-Ming, Song, Qing-Wen, Tang, Xiao-Yan, Zhang, Yi-Men (2015) Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base. Chinese Physics B, 24. 68502pp. doi:10.1088/1674-1056/24/6/068502
Xiao-Yan, Tang, Yu-Ming, Zhang, Yi-Men, Zhang (2010) Study of a 4H–SiC epitaxial n-channel MOSFET. Chinese Physics B, 19. 47204pp. doi:10.1088/1674-1056/19/4/047204
Sheng-Dong, Hu, Bo, Zhang, Zhao-Ji, Li, Xiao-Rong, Luo (2010) A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device. Chinese Physics B, 19. 37303pp. doi:10.1088/1674-1056/19/3/037303
Zhang, Qian, Zhang, Yu-Ming, Yuan, Lei, Zhang, Yi-Men, Tang, Xiao-Yan, Song, Qing-Wen (2012) Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer. Chinese Physics B, 21. 88502pp. doi:10.1088/1674-1056/21/8/088502
Fu, Qiang, Zhang, Bo, Luo, Xiao-Rong, Li, Zhao-Ji (2013) A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate. Chinese Physics B, 22. 77309pp. doi:10.1088/1674-1056/22/7/077309
Zhang, Jin-Ping, Li, Ze-Hong, Zhang, Bo, Li, Zhao-Ji (2012) A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer. Chinese Physics B, 21. 68504pp. doi:10.1088/1674-1056/21/6/068504
 
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