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Sheng-Dong, Hu, Bo, Zhang, Zhao-Ji, Li, Xiao-Rong, Luo (2010) A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device. Chinese Physics B, 19. 37303pp. doi:10.1088/1674-1056/19/3/037303

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Reference TypeJournal (article/letter/editorial)
TitleA new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device
JournalChinese Physics B
AuthorsSheng-Dong, HuAuthor
Bo, ZhangAuthor
Zhao-Ji, LiAuthor
Xiao-Rong, LuoAuthor
Year2010 (March)Volume19
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/19/3/037303Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6000151Long-form Identifiermindat:1:5:6000151:1
GUID0
Full ReferenceSheng-Dong, Hu, Bo, Zhang, Zhao-Ji, Li, Xiao-Rong, Luo (2010) A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device. Chinese Physics B, 19. 37303pp. doi:10.1088/1674-1056/19/3/037303
Plain TextSheng-Dong, Hu, Bo, Zhang, Zhao-Ji, Li, Xiao-Rong, Luo (2010) A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device. Chinese Physics B, 19. 37303pp. doi:10.1088/1674-1056/19/3/037303
In(n.d.) Chinese Physics B Vol. 19. IOP Publishing

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Wu, Li-Juan, Hu, Sheng-Dong, Luo, Xiao-Rong, Zhang, Bo, Li, Zhao-Ji (2011) Partial-SOI high voltage P-channel LDMOS with interface accumulation holes. Chinese Physics B, 20. 107101pp. doi:10.1088/1674-1056/20/10/107101
Hu, Xia-Rong, Zhang, Bo, Luo, Xiao-Rong, Wang, Yuan-Gang, Lei, Tian-Fei, Li, Zhao-Ji (2012) A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS. Chinese Physics B, 21. 78502pp. doi:10.1088/1674-1056/21/7/078502
Fan, Jie, Zhang, Bo, Luo, Xiao-Rong, Li, Zhao-Ji (2013) High-voltage SOI lateral MOSFET with a dual vertical field plate. Chinese Physics B, 22. 118502pp. doi:10.1088/1674-1056/22/11/118502
Sheng-Dong, Hu, Bo, Zhang, Zhao-Ji, Li (2009) A new analytical model of high voltage silicon on insulator (SOI) thin film devices. Chinese Physics B, 18. 315-319 doi:10.1088/1674-1056/18/1/051
Wu, Li-Juan, Hu, Sheng-Dong, Zhang, Bo, Luo, Xiao-Rong, Li, Zhao-Ji (2011) A −188 V 7.2 Ω · mm 2 , P-channel high voltage device formed on an epitaxy-SIMOX substrate. Chinese Physics B, 20. 87101pp. doi:10.1088/1674-1056/20/8/087101
Wu, Li-Juan, Hu, Sheng-Dong, Zhang, Bo, Li, Zhao-Ji (2011) Novel high-voltage power device based on self-adaptive interface charge. Chinese Physics B, 20. 27101pp. doi:10.1088/1674-1056/20/2/027101
Hu, Xia-Rong, Lü, Rui (2014) An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS. Chinese Physics B, 23. 128501pp. doi:10.1088/1674-1056/23/12/128501
Wu, Wei, Zhang, Bo, Fang, Jian, Luo, Xiao-Rong, Li, Zhao-Ji (2013) High-voltage super-junction lateral double-diffused metal—oxide semiconductor with a partial lightly doped pillar. Chinese Physics B, 22. 68501pp. doi:10.1088/1674-1056/22/6/068501
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