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Niu, Jun, Zhang, Yi-Jun, Chang, Ben-Kang, Xiong, Ya-Juan (2011) Influence of varied doping structure on photoemissive property of photocathode. Chinese Physics B, 20. 44209pp. doi:10.1088/1674-1056/20/4/044209

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of varied doping structure on photoemissive property of photocathode
JournalChinese Physics B
AuthorsNiu, JunAuthor
Zhang, Yi-JunAuthor
Chang, Ben-KangAuthor
Xiong, Ya-JuanAuthor
Year2011 (April)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/4/044209Search in ResearchGate
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Mindat Ref. ID6001336Long-form Identifiermindat:1:5:6001336:7
GUID0
Full ReferenceNiu, Jun, Zhang, Yi-Jun, Chang, Ben-Kang, Xiong, Ya-Juan (2011) Influence of varied doping structure on photoemissive property of photocathode. Chinese Physics B, 20. 44209pp. doi:10.1088/1674-1056/20/4/044209
Plain TextNiu, Jun, Zhang, Yi-Jun, Chang, Ben-Kang, Xiong, Ya-Juan (2011) Influence of varied doping structure on photoemissive property of photocathode. Chinese Physics B, 20. 44209pp. doi:10.1088/1674-1056/20/4/044209
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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Yi-Jun, Zhang, Ben-Kang, Chang, Zhi, Yang, Jun, Niu, Ji-Jun, Zou (2009) Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy. Chinese Physics B, 18. 4541-4546 doi:10.1088/1674-1056/18/10/074
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