| Reference Type | Journal (article/letter/editorial) |
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| Title | Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes |
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| Journal | Chinese Physics B |
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| Authors | Zhang, Yi-Jun | Author |
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| Zou, Ji-Jun | Author |
| Wang, Xiao-Hui | Author |
| Chang, Ben-Kang | Author |
| Qian, Yun-Sheng | Author |
| Zhang, Jun-Ju | Author |
| Gao, Pin | Author |
| Year | 2011 (April) | Volume | 20 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/1674-1056/20/4/048501Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6001364 | Long-form Identifier | mindat:1:5:6001364:0 |
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|
| GUID | 0 |
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| Full Reference | Zhang, Yi-Jun, Zou, Ji-Jun, Wang, Xiao-Hui, Chang, Ben-Kang, Qian, Yun-Sheng, Zhang, Jun-Ju, Gao, Pin (2011) Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes. Chinese Physics B, 20. 48501pp. doi:10.1088/1674-1056/20/4/048501 |
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| Plain Text | Zhang, Yi-Jun, Zou, Ji-Jun, Wang, Xiao-Hui, Chang, Ben-Kang, Qian, Yun-Sheng, Zhang, Jun-Ju, Gao, Pin (2011) Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes. Chinese Physics B, 20. 48501pp. doi:10.1088/1674-1056/20/4/048501 |
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| In | (n.d.) Chinese Physics B Vol. 20. IOP Publishing |
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