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Wang, Jun-Cheng, Du, Gang, Wei, Kang-Liang, Zhang, Xing, Liu, Xiao-Yan (2012) Three-dimensional Monte Carlo simulation of bulk fin field effect transistor. Chinese Physics B, 21. 117308pp. doi:10.1088/1674-1056/21/11/117308

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Reference TypeJournal (article/letter/editorial)
TitleThree-dimensional Monte Carlo simulation of bulk fin field effect transistor
JournalChinese Physics B
AuthorsWang, Jun-ChengAuthor
Du, GangAuthor
Wei, Kang-LiangAuthor
Zhang, XingAuthor
Liu, Xiao-YanAuthor
Year2012 (November)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/11/117308Search in ResearchGate
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Mindat Ref. ID6002032Long-form Identifiermindat:1:5:6002032:1
GUID0
Full ReferenceWang, Jun-Cheng, Du, Gang, Wei, Kang-Liang, Zhang, Xing, Liu, Xiao-Yan (2012) Three-dimensional Monte Carlo simulation of bulk fin field effect transistor. Chinese Physics B, 21. 117308pp. doi:10.1088/1674-1056/21/11/117308
Plain TextWang, Jun-Cheng, Du, Gang, Wei, Kang-Liang, Zhang, Xing, Liu, Xiao-Yan (2012) Three-dimensional Monte Carlo simulation of bulk fin field effect transistor. Chinese Physics B, 21. 117308pp. doi:10.1088/1674-1056/21/11/117308
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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