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Wang, Zhi-Gang, Chen, Wan-Jun, Zhang, Jing, Zhang, Bo, Li, Zhao-Ji (2012) Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection. Chinese Physics B, 21. 87305pp. doi:10.1088/1674-1056/21/8/087305

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Reference TypeJournal (article/letter/editorial)
TitleMonolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection
JournalChinese Physics B
AuthorsWang, Zhi-GangAuthor
Chen, Wan-JunAuthor
Zhang, JingAuthor
Zhang, BoAuthor
Li, Zhao-JiAuthor
Year2012 (August)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/8/087305Search in ResearchGate
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Mindat Ref. ID6002809Long-form Identifiermindat:1:5:6002809:5
GUID0
Full ReferenceWang, Zhi-Gang, Chen, Wan-Jun, Zhang, Jing, Zhang, Bo, Li, Zhao-Ji (2012) Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection. Chinese Physics B, 21. 87305pp. doi:10.1088/1674-1056/21/8/087305
Plain TextWang, Zhi-Gang, Chen, Wan-Jun, Zhang, Jing, Zhang, Bo, Li, Zhao-Ji (2012) Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection. Chinese Physics B, 21. 87305pp. doi:10.1088/1674-1056/21/8/087305
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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