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Tian, Ben-Lang, Chen, Chao, Li, Yan-Rong, Zhang, Wan-Li, Liu, Xing-Zhao (2012) Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors. Chinese Physics B, 21. 126102pp. doi:10.1088/1674-1056/21/12/126102

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Reference TypeJournal (article/letter/editorial)
TitleSodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors
JournalChinese Physics B
AuthorsTian, Ben-LangAuthor
Chen, ChaoAuthor
Li, Yan-RongAuthor
Zhang, Wan-LiAuthor
Liu, Xing-ZhaoAuthor
Year2012 (December)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/12/126102Search in ResearchGate
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Mindat Ref. ID6002110Long-form Identifiermindat:1:5:6002110:8
GUID0
Full ReferenceTian, Ben-Lang, Chen, Chao, Li, Yan-Rong, Zhang, Wan-Li, Liu, Xing-Zhao (2012) Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors. Chinese Physics B, 21. 126102pp. doi:10.1088/1674-1056/21/12/126102
Plain TextTian, Ben-Lang, Chen, Chao, Li, Yan-Rong, Zhang, Wan-Li, Liu, Xing-Zhao (2012) Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors. Chinese Physics B, 21. 126102pp. doi:10.1088/1674-1056/21/12/126102
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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