Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Han, Tie-Cheng, Zhao, Hong-Dong, Peng, Xiao-Can (2019) Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer. Chinese Physics B, 28. 47302pp. doi:10.1088/1674-1056/28/4/047302

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleShort-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
JournalChinese Physics B
AuthorsHan, Tie-ChengAuthor
Zhao, Hong-DongAuthor
Peng, Xiao-CanAuthor
Year2019 (April)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/28/4/047302Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6010188Long-form Identifiermindat:1:5:6010188:4
GUID0
Full ReferenceHan, Tie-Cheng, Zhao, Hong-Dong, Peng, Xiao-Can (2019) Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer. Chinese Physics B, 28. 47302pp. doi:10.1088/1674-1056/28/4/047302
Plain TextHan, Tie-Cheng, Zhao, Hong-Dong, Peng, Xiao-Can (2019) Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer. Chinese Physics B, 28. 47302pp. doi:10.1088/1674-1056/28/4/047302
In(n.d.) Chinese Physics B Vol. 28. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Han, Tie-Cheng, Zhao, Hong-Dong, Yang, Lei, Wang, Yang (2017) Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier. Chinese Physics B, 26. 107301pp. doi:10.1088/1674-1056/26/10/107301
Zhao, Sheng-Lei, Wang, Zhi-Zhe, Chen, Da-Zheng, Wang, Mao-Jun, Dai, Yang, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2019) 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor. Chinese Physics B, 28. 27301pp. doi:10.1088/1674-1056/28/2/027301
He, Yun-Long, Zhang, Fang, Liu, Kai, Hong, Yue-Hua, Zheng, Xue-Feng, Wang, Chong, Ma, Xiao-Hua, Hao, Yue (2022) Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate. Chinese Physics B, 31 (6) 68501 doi:10.1088/1674-1056/ac3739
Zhao, Minglong, Tang, Xiansheng, Huo, Wenxue, Han, Lili, Deng, Zhen, Jiang, Yang, Wang, Wenxin, Chen, Hong, Du, Chunhua, Jia, Haiqiang (2020) Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate*. Chinese Physics B, 29 (4) 48104pp. doi:10.1088/1674-1056/ab7d9c
Bao, Si-Qin-Gao-Wa, Ma, Xiao-Hua, Chen, Wei-Wei, Yang, Ling, Hou, Bin, Zhu, Qing, Zhu, Jie-Jie, Hao, Yue (2019) Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors. Chinese Physics B, 28. 67304pp. doi:10.1088/1674-1056/28/6/067304
He, Yun-Long, Wang, Chong, Mi, Min-Han, Zheng, Xue-Feng, Zhang, Meng, Zhao, Meng-Di, Zhang, Heng-Shuang, Chen, Li-Xiang, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2016) Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment. Chinese Physics B, 25. 117305pp. doi:10.1088/1674-1056/25/11/117305
Mi, Min-Han, Zhang, Kai, Chen, Xing, Zhao, Sheng-Lei, Wang, Chong, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2014) Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage. Chinese Physics B, 23. 77304pp. doi:10.1088/1674-1056/23/7/077304
Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Hou, Bin, Yang, Xiao-Lei, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2015) Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 24. 117305pp. doi:10.1088/1674-1056/24/11/117305
Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Chen, Wei-Wei, Hou, Bin, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2016) Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor. Chinese Physics B, 25. 27303pp. doi:10.1088/1674-1056/25/2/027303
Zhang, Kai, Cao, Meng-Yi, Chen, Yong-He, Yang, Li-Yuan, Wang, Chong, Ma, Xiao-Hua, Hao, Yue (2013) Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 22. 57304pp. doi:10.1088/1674-1056/22/5/057304
Wang, Chong, He, Yun-Long, Zheng, Xue-Feng, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2013) AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO. Chinese Physics B, 22. 68503pp. doi:10.1088/1674-1056/22/6/068503
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 19, 2025 03:10:46
Go to top of page