Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Hou, Bin, Yang, Xiao-Lei, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2015) Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 24. 117305pp. doi:10.1088/1674-1056/24/11/117305
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors | ||
| Journal | Chinese Physics B | ||
| Authors | Luo, Jun | Author | |
| Zhao, Sheng-Lei | Author | ||
| Mi, Min-Han | Author | ||
| Hou, Bin | Author | ||
| Yang, Xiao-Lei | Author | ||
| Zhang, Jin-Cheng | Author | ||
| Ma, Xiao-Hua | Author | ||
| Hao, Yue | Author | ||
| Year | 2015 (November) | Volume | 24 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/24/11/117305Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6005725 | Long-form Identifier | mindat:1:5:6005725:5 |
| GUID | 0 | ||
| Full Reference | Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Hou, Bin, Yang, Xiao-Lei, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2015) Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 24. 117305pp. doi:10.1088/1674-1056/24/11/117305 | ||
| Plain Text | Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Hou, Bin, Yang, Xiao-Lei, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2015) Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 24. 117305pp. doi:10.1088/1674-1056/24/11/117305 | ||
| In | (n.d.) Chinese Physics B Vol. 24. IOP Publishing | ||
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