Zhang, Peng, Zhao, Sheng-Lei, Xue, Jun-Shuai, Zhu, Jie-Jie, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2015) Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors. Chinese Physics B, 24. 127306pp. doi:10.1088/1674-1056/24/12/127306
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors | ||
| Journal | Chinese Physics B | ||
| Authors | Zhang, Peng | Author | |
| Zhao, Sheng-Lei | Author | ||
| Xue, Jun-Shuai | Author | ||
| Zhu, Jie-Jie | Author | ||
| Ma, Xiao-Hua | Author | ||
| Zhang, Jin-Cheng | Author | ||
| Hao, Yue | Author | ||
| Year | 2015 (December) | Volume | 24 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/24/12/127306Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6005817 | Long-form Identifier | mindat:1:5:6005817:5 |
| GUID | 0 | ||
| Full Reference | Zhang, Peng, Zhao, Sheng-Lei, Xue, Jun-Shuai, Zhu, Jie-Jie, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2015) Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors. Chinese Physics B, 24. 127306pp. doi:10.1088/1674-1056/24/12/127306 | ||
| Plain Text | Zhang, Peng, Zhao, Sheng-Lei, Xue, Jun-Shuai, Zhu, Jie-Jie, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2015) Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors. Chinese Physics B, 24. 127306pp. doi:10.1088/1674-1056/24/12/127306 | ||
| In | (n.d.) Chinese Physics B Vol. 24. IOP Publishing | ||
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