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Chen, Wei-Wei, Ma, Xiao-Hua, Hou, Bin, Zhu, Jie-Jie, Zhang, Jin-Cheng, Hao, Yue (2013) The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress. Chinese Physics B, 22. 107303pp. doi:10.1088/1674-1056/22/10/107303

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Reference TypeJournal (article/letter/editorial)
TitleThe degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress
JournalChinese Physics B
AuthorsChen, Wei-WeiAuthor
Ma, Xiao-HuaAuthor
Hou, BinAuthor
Zhu, Jie-JieAuthor
Zhang, Jin-ChengAuthor
Hao, YueAuthor
Year2013 (October)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/10/107303Search in ResearchGate
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Mindat Ref. ID6003118Long-form Identifiermindat:1:5:6003118:7
GUID0
Full ReferenceChen, Wei-Wei, Ma, Xiao-Hua, Hou, Bin, Zhu, Jie-Jie, Zhang, Jin-Cheng, Hao, Yue (2013) The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress. Chinese Physics B, 22. 107303pp. doi:10.1088/1674-1056/22/10/107303
Plain TextChen, Wei-Wei, Ma, Xiao-Hua, Hou, Bin, Zhu, Jie-Jie, Zhang, Jin-Cheng, Hao, Yue (2013) The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress. Chinese Physics B, 22. 107303pp. doi:10.1088/1674-1056/22/10/107303
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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