| Reference Type | Journal (article/letter/editorial) |
|---|
| Title | Neutron irradiation effects on AlGaN/GaN high electron mobility transistors |
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| Journal | Chinese Physics B |
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| Authors | Lü, Ling | Author |
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| Zhang, Jin-Cheng | Author |
| Xue, Jun-Shuai | Author |
| Ma, Xiao-Hua | Author |
| Zhang, Wei | Author |
| Bi, Zhi-Wei | Author |
| Zhang, Yue | Author |
| Hao, Yue | Author |
| Year | 2012 (March) | Volume | 21 |
|---|
| Publisher | IOP Publishing |
|---|
| DOI | doi:10.1088/1674-1056/21/3/037104Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6002302 | Long-form Identifier | mindat:1:5:6002302:7 |
|---|
|
| GUID | 0 |
|---|
| Full Reference | Lü, Ling, Zhang, Jin-Cheng, Xue, Jun-Shuai, Ma, Xiao-Hua, Zhang, Wei, Bi, Zhi-Wei, Zhang, Yue, Hao, Yue (2012) Neutron irradiation effects on AlGaN/GaN high electron mobility transistors. Chinese Physics B, 21. 37104pp. doi:10.1088/1674-1056/21/3/037104 |
|---|
| Plain Text | Lü, Ling, Zhang, Jin-Cheng, Xue, Jun-Shuai, Ma, Xiao-Hua, Zhang, Wei, Bi, Zhi-Wei, Zhang, Yue, Hao, Yue (2012) Neutron irradiation effects on AlGaN/GaN high electron mobility transistors. Chinese Physics B, 21. 37104pp. doi:10.1088/1674-1056/21/3/037104 |
|---|
| In | (n.d.) Chinese Physics B Vol. 21. IOP Publishing |
|---|
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