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Yang, Li-Yuan, Hao, Yue, Ma, Xiao-Hua, Zhang, Jin-Cheng, Pan, Cai-Yuan, Ma, Ji-Gang, Zhang, Kai, Ma, Ping (2011) High temperature characteristics of AlGaN/GaN high electron mobility transistors. Chinese Physics B, 20. 117302pp. doi:10.1088/1674-1056/20/11/117302

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Reference TypeJournal (article/letter/editorial)
TitleHigh temperature characteristics of AlGaN/GaN high electron mobility transistors
JournalChinese Physics B
AuthorsYang, Li-YuanAuthor
Hao, YueAuthor
Ma, Xiao-HuaAuthor
Zhang, Jin-ChengAuthor
Pan, Cai-YuanAuthor
Ma, Ji-GangAuthor
Zhang, KaiAuthor
Ma, PingAuthor
Year2011 (November)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/11/117302Search in ResearchGate
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Mindat Ref. ID6001005Long-form Identifiermindat:1:5:6001005:0
GUID0
Full ReferenceYang, Li-Yuan, Hao, Yue, Ma, Xiao-Hua, Zhang, Jin-Cheng, Pan, Cai-Yuan, Ma, Ji-Gang, Zhang, Kai, Ma, Ping (2011) High temperature characteristics of AlGaN/GaN high electron mobility transistors. Chinese Physics B, 20. 117302pp. doi:10.1088/1674-1056/20/11/117302
Plain TextYang, Li-Yuan, Hao, Yue, Ma, Xiao-Hua, Zhang, Jin-Cheng, Pan, Cai-Yuan, Ma, Ji-Gang, Zhang, Kai, Ma, Ping (2011) High temperature characteristics of AlGaN/GaN high electron mobility transistors. Chinese Physics B, 20. 117302pp. doi:10.1088/1674-1056/20/11/117302
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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