Vote for your favorite mineral in #MinCup25! - Sanidine vs. Hematite
It's a pair of often-overlooked classics as potassium feldspar sanidine competes with iron ore hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Zhu, Qing, Ma, Xiao-Hua, Chen, Wei-Wei, Hou, Bin, Zhu, Jie-Jie, Zhang, Meng, Chen, Li-Xiang, Cao, Yan-Rong, Hao, Yue (2016) Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure. Chinese Physics B, 25. 67305pp. doi:10.1088/1674-1056/25/6/067305

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleInfluence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure
JournalChinese Physics B
AuthorsZhu, QingAuthor
Ma, Xiao-HuaAuthor
Chen, Wei-WeiAuthor
Hou, BinAuthor
Zhu, Jie-JieAuthor
Zhang, MengAuthor
Chen, Li-XiangAuthor
Cao, Yan-RongAuthor
Hao, YueAuthor
Year2016 (June)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/6/067305Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6007414Long-form Identifiermindat:1:5:6007414:6
GUID0
Full ReferenceZhu, Qing, Ma, Xiao-Hua, Chen, Wei-Wei, Hou, Bin, Zhu, Jie-Jie, Zhang, Meng, Chen, Li-Xiang, Cao, Yan-Rong, Hao, Yue (2016) Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure. Chinese Physics B, 25. 67305pp. doi:10.1088/1674-1056/25/6/067305
Plain TextZhu, Qing, Ma, Xiao-Hua, Chen, Wei-Wei, Hou, Bin, Zhu, Jie-Jie, Zhang, Meng, Chen, Li-Xiang, Cao, Yan-Rong, Hao, Yue (2016) Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure. Chinese Physics B, 25. 67305pp. doi:10.1088/1674-1056/25/6/067305
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Bao, Si-Qin-Gao-Wa, Ma, Xiao-Hua, Chen, Wei-Wei, Yang, Ling, Hou, Bin, Zhu, Qing, Zhu, Jie-Jie, Hao, Yue (2019) Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors. Chinese Physics B, 28. 67304pp. doi:10.1088/1674-1056/28/6/067304
Chen, Wei-Wei, Ma, Xiao-Hua, Hou, Bin, Zhu, Jie-Jie, Zhang, Jin-Cheng, Hao, Yue (2013) The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress. Chinese Physics B, 22. 107303pp. doi:10.1088/1674-1056/22/10/107303
Hu, Sheng, Yang, Ling, Mi, Min-Han, Hou, Bin, Liu, Sheng, Zhang, Meng, Wu, Mei, Zhu, Qing, Wu, Sheng, Lu, Yang, Zhu, Jie-Jie, Zhou, Xiao-Wei, Lv, Ling, Ma, Xiao-Hua, Hao, Yue (2020) Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures*. Chinese Physics B, 29 (8) 87305pp. doi:10.1088/1674-1056/ab96a4
Zhu, Qing, Ma, Xiao-Hua, Chen, Yi-Lin, Hou, Bin, Zhu, Jie-Jie, Zhang, Meng, Wu, Mei, Yang, Ling, Hao, Yue (2020) Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs*. Chinese Physics B, 29 (4) 47304pp. doi:10.1088/1674-1056/ab7809
Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Chen, Wei-Wei, Hou, Bin, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2016) Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor. Chinese Physics B, 25. 27303pp. doi:10.1088/1674-1056/25/2/027303
Ma, Xiao-Hua, Chen, Wei-Wei, Hou, Bin, Zhang, Kai, Zhu, Jie-Jie, Zhang, Jin-Cheng, Zheng, Xue-Feng, Hao, Yue (2014) Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors. Applied Physics Letters, 104 (9). 93504pp. doi:10.1063/1.4867525
Yang, Hua-Li, Wang, Bao-Min, Zhu, Xiao-Jian, Shang, Jie, Chen, Bin, Li, Run-Wei (2016) Modulation of physical properties of oxide thin films by multiple fields. Chinese Physics B, 25. 67303pp. doi:10.1088/1674-1056/25/6/067303
Wang, Chong, Zhao, Meng-Di, He, Yun-Long, Zheng, Xue-Feng, Zhang, Kun, Wei, Xiao-Xiao, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2016) Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT. Chinese Physics B, 25. 108504pp. doi:10.1088/1674-1056/25/10/108504
Jing, Si-Qi, Ma, Xiao-Hua, Zhu, Jie-Jie, Zhang, Xin-Chuang, Liu, Si-Yu, Zhu, Qing, Hao, Yue (2020) Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments*. Chinese Physics B, 29 (10) 107302pp. doi:10.1088/1674-1056/ab99bb
Cao, Meng-Yi, Lu, Yang, Wei, Jia-Xing, Chen, Yong-He, Li, Wei-Jun, Zheng, Jia-Xin, Ma, Xiao-Hua, Hao, Yue (2014) An improved EEHEMT model for kink effect on AlGaN/GaN HEMT. Chinese Physics B, 23. 87201pp. doi:10.1088/1674-1056/23/8/087201
He, Yun-Long, Wang, Chong, Mi, Min-Han, Zheng, Xue-Feng, Zhang, Meng, Zhao, Meng-Di, Zhang, Heng-Shuang, Chen, Li-Xiang, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2016) Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment. Chinese Physics B, 25. 117305pp. doi:10.1088/1674-1056/25/11/117305
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 7, 2025 17:04:11
Go to top of page