Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Zhao, Yi, Zhang, Jin-Cheng, Xue, Jun-Shuai, Zhou, Xiao-Wei, Xu, Sheng-Rui, Hao, Yue (2015) Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys. Chinese Physics B, 24. 17302pp. doi:10.1088/1674-1056/24/1/017302

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleInfluence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys
JournalChinese Physics B
AuthorsZhao, YiAuthor
Zhang, Jin-ChengAuthor
Xue, Jun-ShuaiAuthor
Zhou, Xiao-WeiAuthor
Xu, Sheng-RuiAuthor
Hao, YueAuthor
Year2015 (January)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/1/017302Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6005526Long-form Identifiermindat:1:5:6005526:6
GUID0
Full ReferenceZhao, Yi, Zhang, Jin-Cheng, Xue, Jun-Shuai, Zhou, Xiao-Wei, Xu, Sheng-Rui, Hao, Yue (2015) Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys. Chinese Physics B, 24. 17302pp. doi:10.1088/1674-1056/24/1/017302
Plain TextZhao, Yi, Zhang, Jin-Cheng, Xue, Jun-Shuai, Zhou, Xiao-Wei, Xu, Sheng-Rui, Hao, Yue (2015) Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys. Chinese Physics B, 24. 17302pp. doi:10.1088/1674-1056/24/1/017302
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Zhang, Peng, Zhao, Sheng-Lei, Xue, Jun-Shuai, Zhu, Jie-Jie, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue (2015) Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors. Chinese Physics B, 24. 127306pp. doi:10.1088/1674-1056/24/12/127306
Xue, Xiao-Yong, Xu, Sheng-Rui, Zhang, Jin-Cheng, Lin, Zhi-Yu, Ma, Jun-Cai, Liu, Zi-Yang, Xue, Jun-Shuai, Hao, Yue (2012) Temperature dependences of Raman scattering in different types of GaN epilayers. Chinese Physics B, 21. 27803pp. doi:10.1088/1674-1056/21/2/027803
Zhang, Wei, Xue, Jun-Shuai, Zhou, Xiao-Wei, Zhang, Yue, Liu, Zi-Yang, Zhang, Jin-Cheng, Hao, Yue (2012) Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer. Chinese Physics B, 21. 77103pp. doi:10.1088/1674-1056/21/7/077103
Zhang, Xiao-Ming, Xiao, Jun-Jun, Zhang, Qiang (2014) Optical binding forces between plasmonic nanocubes: A numerical study based on discrete-dipole approximation. Chinese Physics B, 23. 17302pp. doi:10.1088/1674-1056/23/1/017302
Lü, Ling, Zhang, Jin-Cheng, Xue, Jun-Shuai, Ma, Xiao-Hua, Zhang, Wei, Bi, Zhi-Wei, Zhang, Yue, Hao, Yue (2012) Neutron irradiation effects on AlGaN/GaN high electron mobility transistors. Chinese Physics B, 21. 37104pp. doi:10.1088/1674-1056/21/3/037104
Du, Da-Chao, Zhang, Jin-Cheng, Ou, Xin-Xiu, Wang, Hao, Chen, Ke, Xue, Jun-Shuai, Xu, Sheng-Rui, Hao, Yue (2011) Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN. Chinese Physics B, 20. 37805pp. doi:10.1088/1674-1056/20/3/037805
Lin, Zhi-Yu, Zhang, Jin-Cheng, Zhou, Hao, Li, Xiao-Gang, Meng, Fan-Na, Zhang, Lin-Xia, Ai, Shan, Xu, Sheng-Rui, Zhao, Yi, Hao, Yue (2012) Influence of double AlN buffer layers on the qualities of GaN films prepared by metal—organic chemical vapour deposition. Chinese Physics B, 21. 126804pp. doi:10.1088/1674-1056/21/12/126804
Cao, Rong-Tao, Xu, Sheng-Rui, Zhang, Jin-Cheng, Zhao, Yi, Xue, Jun-Shuai, Ha, Wei, Zhang, Shuai, Cui, Pei-Shui, Wen, Hui-Juan, Chen, Xing (2014) Improvement in a -plane GaN crystalline quality using wet etching method. Chinese Physics B, 23. 47804pp. doi:10.1088/1674-1056/23/4/047804
Zhi-Ming, Li, Yue, Hao, Jin-Cheng, Zhang, Sheng-Rui, Xu, Jin-Yu, Ni, Xiao-Wei, Zhou (2009) Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor. Chinese Physics B, 18. 5072-5077 doi:10.1088/1674-1056/18/11/077
Zhou, Pan, He, Da-Wei (2016) Modulating doping and interface magnetism of epitaxial graphene on SiC(0001). Chinese Physics B, 25. 17302pp. doi:10.1088/1674-1056/25/1/017302
Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Hou, Bin, Yang, Xiao-Lei, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue (2015) Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors. Chinese Physics B, 24. 117305pp. doi:10.1088/1674-1056/24/11/117305
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 30, 2025 04:44:31
Go to top of page