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Wang, Tian-Hu, Xu, Jin-Liang (2012) Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure. Chinese Physics B, 21. 128504pp. doi:10.1088/1674-1056/21/12/128504

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Reference TypeJournal (article/letter/editorial)
TitleImproved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure
JournalChinese Physics B
AuthorsWang, Tian-HuAuthor
Xu, Jin-LiangAuthor
Year2012 (December)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/12/128504Search in ResearchGate
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Mindat Ref. ID6002144Long-form Identifiermindat:1:5:6002144:5
GUID0
Full ReferenceWang, Tian-Hu, Xu, Jin-Liang (2012) Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure. Chinese Physics B, 21. 128504pp. doi:10.1088/1674-1056/21/12/128504
Plain TextWang, Tian-Hu, Xu, Jin-Liang (2012) Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure. Chinese Physics B, 21. 128504pp. doi:10.1088/1674-1056/21/12/128504
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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