| Reference Type | Journal (article/letter/editorial) |
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| Title | A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel |
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| Journal | Chinese Physics B |
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| Authors | Zhang, Jian | Author |
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| He, Jin | Author |
| Zhou, Xing-Ye | Author |
| Zhang, Li-Ning | Author |
| Ma, Yu-Tao | Author |
| Chen, Qin | Author |
| Zhang, Xu-Kai | Author |
| Yang, Zhang | Author |
| Wang, Rui-Fei | Author |
| Han, Yu | Author |
| Chan, Mansun | Author |
| Year | 2012 (April) | Volume | 21 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/1674-1056/21/4/047303Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6002406 | Long-form Identifier | mindat:1:5:6002406:2 |
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|
| GUID | 0 |
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| Full Reference | Zhang, Jian, He, Jin, Zhou, Xing-Ye, Zhang, Li-Ning, Ma, Yu-Tao, Chen, Qin, Zhang, Xu-Kai, Yang, Zhang, Wang, Rui-Fei, Han, Yu, Chan, Mansun (2012) A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel. Chinese Physics B, 21. 47303pp. doi:10.1088/1674-1056/21/4/047303 |
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| Plain Text | Zhang, Jian, He, Jin, Zhou, Xing-Ye, Zhang, Li-Ning, Ma, Yu-Tao, Chen, Qin, Zhang, Xu-Kai, Yang, Zhang, Wang, Rui-Fei, Han, Yu, Chan, Mansun (2012) A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel. Chinese Physics B, 21. 47303pp. doi:10.1088/1674-1056/21/4/047303 |
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| In | (n.d.) Chinese Physics B Vol. 21. IOP Publishing |
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