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Sun, Yun-Bin, Zhang, Xiang-Qun, Li, Guo-Ke, Cheng, Zhao-Hua (2012) Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO 2 dilute magnetic semiconductors. Chinese Physics B, 21. 47503pp. doi:10.1088/1674-1056/21/4/047503

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Reference TypeJournal (article/letter/editorial)
TitleEffects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO 2 dilute magnetic semiconductors
JournalChinese Physics B
AuthorsSun, Yun-BinAuthor
Zhang, Xiang-QunAuthor
Li, Guo-KeAuthor
Cheng, Zhao-HuaAuthor
Year2012 (April)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/4/047503Search in ResearchGate
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Mindat Ref. ID6002413Long-form Identifiermindat:1:5:6002413:2
GUID0
Full ReferenceSun, Yun-Bin, Zhang, Xiang-Qun, Li, Guo-Ke, Cheng, Zhao-Hua (2012) Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO 2 dilute magnetic semiconductors. Chinese Physics B, 21. 47503pp. doi:10.1088/1674-1056/21/4/047503
Plain TextSun, Yun-Bin, Zhang, Xiang-Qun, Li, Guo-Ke, Cheng, Zhao-Hua (2012) Effects of oxygen vacancy location on the electronic structure and spin density of Co-doped rutile TiO 2 dilute magnetic semiconductors. Chinese Physics B, 21. 47503pp. doi:10.1088/1674-1056/21/4/047503
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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